2016
DOI: 10.1002/adma.201602274
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Atomic‐Scale Origin of Long‐Term Stability and High Performance of p‐GaN Nanowire Arrays for Photocatalytic Overall Pure Water Splitting

Abstract: The atomic-scale origin of the unusually high performance and long-term stability of wurtzite p-GaN oriented nanowire arrays is revealed. Nitrogen termination of both the polar (0001¯) top face and the nonpolar (101¯0) side faces of the nanowires is essential for long-term stability and high efficiency. Such a distinct atomic configuration ensures not only stability against (photo) oxidation in air and in water/electrolyte but, as importantly, also provides the necessary overall reverse crystal polarization ne… Show more

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Cited by 119 publications
(108 citation statements)
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“…[30][31][32] Even though GaN nanowire-based devices, including tunnel-injected DUV light-emitting diodes (LEDs) 33 and LEDs for monolithic metal-optoelectronics 34 and high-power light emitters, 35 have recently been realized, understanding and optimizing the electrothermal characteristics 36,37 of GaN-based nanowires is critical for identifying and achieving their full potential in opto-electrothermal device applications. 38,39 As a consequence of the thermal activation of non-radiative recombination channels, we observed an increasing trend in the amount of generated photoinduced entropy of the InGaN nanowire system as its temperature approached room temperature, which is a valid assessment of the thermodynamic disorder in photoluminescent semiconducting materials. 40 Furthermore, the non-radiative photocarrier recombination lifetimes in nanostructured materials are naturally shorter than those of bulk structures owing to their higher surface-to-volume ratios.…”
Section: Introductionmentioning
confidence: 77%
“…[30][31][32] Even though GaN nanowire-based devices, including tunnel-injected DUV light-emitting diodes (LEDs) 33 and LEDs for monolithic metal-optoelectronics 34 and high-power light emitters, 35 have recently been realized, understanding and optimizing the electrothermal characteristics 36,37 of GaN-based nanowires is critical for identifying and achieving their full potential in opto-electrothermal device applications. 38,39 As a consequence of the thermal activation of non-radiative recombination channels, we observed an increasing trend in the amount of generated photoinduced entropy of the InGaN nanowire system as its temperature approached room temperature, which is a valid assessment of the thermodynamic disorder in photoluminescent semiconducting materials. 40 Furthermore, the non-radiative photocarrier recombination lifetimes in nanostructured materials are naturally shorter than those of bulk structures owing to their higher surface-to-volume ratios.…”
Section: Introductionmentioning
confidence: 77%
“…As aforementioned, the polar structure of GaN consists of a hexagonal close packing of nitrogen (N) and gallium (Ga) atoms arranged in space group P6 3 mc with Ga atoms in tetrahedral sites (point group 3 m ), which exhibits a c ‐elongated hexagon with a polar plane (Ga‐ or N‐ polar) and C 6 v ‐symmetric nonpolar side plane. Accordingly, the exposed surfaces of the GaN nanorod arrays are schematically represented in Figure h. The polar c ‐plane is perpendicular to c ‐axis while the nonpolar a ‐plane and m ‐plane are parallel to the c ‐axis ([0001]).…”
Section: Resultsmentioning
confidence: 99%
“…Moreover,operando ambient pressure X-ray photoelectron spectroscopy (APXPS) has also show groundbreaking ability for instanceb ys patially-resolvingt he surfacechemical states of aworkingsolid state electrochemical cell (SOC), providing critical understanding for the rational design of such devices. [75] Finally,t he combinationo fn ovel and smart energy materials design studied at atomics cale and in "real" operating conditions by operando X-ray spectroscopies at synchrotron radiation facilities worldwide is an ideal situation for the current and future generation of scientists to unravel new phenomena as well as establishing quantitative correlations between structural properties, electronic structure and physical/chemical properties of materials [76][77][78] to not only improveour fundamental knowledge but also going beyond as imple incremental increase of device efficiency by breakthrough fundamental and appliedd iscoveries in materials science, condensed matter physics,c hemistry and biology.S uch advances in energy materials, characterizations techniques as wella sb etter fundamental and applied understanding should allow scientists and engineers of all origins to efficiently contribute( and potentially solve) current societal and environmental crucial issues that is, novel carbon-zero sustainable energy resources such as stable and efficient hydrogen generation from (sea)water splitting [79,80] for ac leanerand safer world.…”
Section: Discussionmentioning
confidence: 99%