Atomic-scale redistribution of Pt during reactive diffusion in Ni (5% Pt)–Si contacts

Cojocaru‐Mirédin, Oana; Cadel, E.; Blavette, D.; Mangelinck, Dominique; Hoummada, K.; Genevois, Cécile; Déconihout, B.

doi:10.1016/j.ultramic.2009.02.001

Cited by 18 publications

(9 citation statements)

References 23 publications

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“…5(c). This phenomenon is similar to the case of Pt in NiSi [33]. Cojocaru-Mir edin et al [33] have reported that, although the NiSi and PtSi share the same lattice structure (orthorhombic), NiSi and PtSi are not totally miscible.…”

supporting

confidence: 66%

“…This phenomenon is similar to the case of Pt in NiSi [33]. Cojocaru-Mir edin et al [33] have reported that, although the NiSi and PtSi share the same lattice structure (orthorhombic), NiSi and PtSi are not totally miscible. Moreover, most Pt atoms segregated at the Ni 2 Si/NiSi interface and cannot interact with NiSi to form ternary Ni(Pt)Si which suggests a limited solubility of Pt in NiSi.…”

supporting

confidence: 66%

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Optimization of a two-step Ni(5% Pt) germanosilicidation process and the redistribution of Pt in Ni(Pt)Si1−Ge germanosilicide

Liu¹,

Wang²,

Guo³

et al. 2015

Vacuum

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supporting

confidence: 66%

supporting

confidence: 66%

Optimization of a two-step Ni(5% Pt) germanosilicidation process and the redistribution of Pt in Ni(Pt)Si1−Ge germanosilicide

Liu¹,

Wang²,

Guo³

et al. 2015

Vacuum

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“…The expansion of the NiSi lattice caused by the incorporation of Pt is thought to be the origin of the texture evolution. Cojocaru-Mirédin et al studied the redistribution of Pt after heat treatment at 290 °C for 1 h by large-angle atom probe tomography assisted by femtosecond laser pulses [12]. Two silicides Ni 2 Si and NiSi were found While these experimental data provide an overall phenomenological picture of the silicidation process, a detailed atomistic description and understanding is still incomplete.…”

Section: Introductionmentioning

confidence: 99%

Formation of nickel-platinum silicides on a silicon substrate: Structure, phase stability, and diffusion from ab initio computations

Christensen¹,

Eyert²,

Freeman³

et al. 2013

Journal of Applied Physics

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The formation of Ni(Pt)silicides on a Si(001) surface is investigated using an ab initio approach.After deposition of a Ni overlayer alloyed with Pt, the calculations reveal fast diffusion of Ni atoms into the Si lattice, which leads initially to the formation of Ni 2 Si. At the same time Si atoms are found to diffuse into the metallic overlayer. The transformation of Ni 2 Si into NiSi is likely to proceed via a vacancy-assisted diffusion mechanism. Silicon atoms are the main diffusing species in this transformation, migrating from the Si substrate through the growing NiSi layer into the Ni 2 Si. Pt atoms have a low solubility in Ni 2 Si and prefer Si-sites in the NiSi lattice, thereby stabilizing the NiSi phase. The diffusivity of Pt is lower than that of Ni. Furthermore, Pt atoms have a tendency to segregate to interfaces, thereby acting as diffusion barriers.

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“…1 This redistribution has an effect on the electrical properties of the silicide/silicon interface. For example, the solubility and the diffusivity of the dopant in each phase play an important role in the snowplow phenomenon, 1,6,7 that is, the displacement of dopants by the moving interfaces during the formation of a new phase. 2 It was also shown that in fully silicided gates dopant accumulation located at the interface between the silicide and the gate oxide allows to modulate the gate work function.…”

Section: Introductionmentioning

confidence: 99%

Lattice and grain-boundary diffusion of As in Ni2Si

Blum

Portavoce

Mangelinck

et al. 2008

Journal of Applied Physics

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The effect of solute segregation on strain localization in nanocrystalline thin films: Dislocation glide vs. grainboundary mediated plasticity Lattice and grain-boundary diffusions of boron atoms in BaSi2 epitaxial films on Si(111) J. Appl. Phys. 113, 053511 (2013); 10.1063/1.4790597 Effect of Cu and Ag solute segregation on βSn grain boundary diffusivityThe diffusion coefficient of As in 260 nm thick polycrystalline Ni 2 Si layers has been measured both in grains and in grain boundaries ͑GBs͒. As was implanted in Ni 2 Si layers prepared via the reaction between a Si layer and a Ni layer deposited by magnetron sputtering on a ͑100͒ Si substrate covered with a SiO 2 film. The As concentration profiles in the samples were measured using secondary ion mass spectroscopy before and after annealing ͑400-700°C͒. The diffusion coefficients in the grains and the GBs have been determined using two-dimensional finite element simulations based on the Fisher model geometry. For short time annealing ͑1 h͒ and temperatures lower than 600°C, lattice diffusion has not been observed. However, GB diffusion was evidenced for temperatures as low as 400°C. For higher thermal budgets, As diffuses simultaneously in the volume of the grains and in the GBs. Lattice diffusion is characterized by a pre-exponential factor D 0v ϳ 1.5 ϫ 10 −1 cm 2 s −1 and an activation energy Q v ϳ 2.72Ϯ 0.10 eV. In the case of GB diffusion, the triple product of the As segregation coefficient ͑s͒, the GB width ͑␦͒, and the diffusion coefficient ͑D GB ͒ is found to be s␦D GB = 9.0ϫ 10 −3 exp͑−3.07Ϯ 0.15 eV/ kT͒ cm 3 s −1 . Various types of simulations were used in order to support the discussion of the results.

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Atomic-scale redistribution of Pt during reactive diffusion in Ni (5% Pt)–Si contacts

Cited by 18 publications

References 23 publications

Optimization of a two-step Ni(5% Pt) germanosilicidation process and the redistribution of Pt in Ni(Pt)Si1−Ge germanosilicide

Optimization of a two-step Ni(5% Pt) germanosilicidation process and the redistribution of Pt in Ni(Pt)Si1−Ge germanosilicide

Formation of nickel-platinum silicides on a silicon substrate: Structure, phase stability, and diffusion from ab initio computations

Lattice and grain-boundary diffusion of As in Ni2Si

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