“…It is known, for example, that α-Fe 2 O 3 can accommodate ion vacancies in both the iron and oxygen sites, [10,11] and that iron ions can reside in interstitial sites which are expected to be empty. [12,13] Secondary elements can also be intentionally or inadvertently introduced into the lattice, changing the concentration of specific defects and inducing various new types of defects. This strategy has been intentionally pursued using ions such as Si(IV), Sn(IV), or fluoride to tune semiconductor properties and improve PEC performance.…”