Atomic structure of the epitaxial Al–Si interface

LeGoues, F. K.; Krakow, William; Ho, Paul S.

doi:10.1080/01418618608245295

Cited by 82 publications

(26 citation statements)

References 11 publications

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“…46 48 The thick layers showed Al(111) and Al(100) crystallites, of which the Al(100) crystallites disappeared after annealing. This agrees with the results of a theoretical approach published by Zur and McGill two years earlier in 1984, 49 who calculated that heteroepitaxy between two lattices could be obtained when n translations of one lattice match m of the other, with m and n being small integers.…”

Section: Thick Layers Of Al(111) and Al(100)mentioning

confidence: 98%

Ultrathin Al layers on Si(111) and Si(100): structures and phase transitions

Gröger¹,

Barczewski²

2001

Surface & Interface Analysis

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The metal/silicon system Al/Si(111)-7 × 7 was studied by our group with spot-profile analysis low-energy electron diffraction (SPA-LEED), reflection high-energy electron diffraction (RHEED) and scanning force microscopy (SFM), with emphasis on temperature-dependent order-disorder phase transitions of the surface structures. A review of the Al/Si(111) system describes our results in context with the findings of others. An improved phase formation diagram, including earlier results, is deduced. Between the submonolayer phases and the thick films a cluster phase (the d-phase) was found that exists in a coverage range of 1-10 monolayers, showing intriguing temperature-dependent effects. At coverages above 20 monolayers the behaviour changes to that of thick films. Although the Al/Si(100) system has completely different reconstructions below one monolayer, the same d-phase as on Si(111) appears at one monolayer, with similar thermal behaviour.

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Section: Thick Layers Of Al(111) and Al(100)mentioning

confidence: 98%

Ultrathin Al layers on Si(111) and Si(100): structures and phase transitions

Gröger¹,

Barczewski²

2001

Surface & Interface Analysis

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“…The AI/Si (111) is a semicoherent interface whose structure has been studied by LeGoues et al [9]. Despite the 4:3 ratio of lattice parameters between Si and Al, an Al film can be grown epitaxially on Si(1 11) with most of the lattice mismatch being accommodated by interface reconstruction.…”

Section: Ai/simentioning

confidence: 99%

Hydrogen Segregation To Interfaces

et al. 1991

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In order to achieve a better understanding of hydrogen segregation to interfaces, a combination of techniques is being used in which hydrogen is deliberately introduced into planar interfaces between thin films, then the segregation measured using highenergy ion-beam profiling techniques. Results are given for heterophase interfaces produced by epitaxial deposition on silicon: The AI/Si (111) and CoSi 2 /Si (001) interfaces. A preliminary study of Au tilt boundaries in thin-film bicrystals shows the presence of a large amount of hydrogen, -1016 atoms/cm 2 , in the boundary after plasma hydrogenation, but also the presence of C impurity (-1.6 x 1015 atoms/cm 2 ) and Ag.

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“…In other words the filter function becomes a complex function, i.e., a phase filter, corresponding to an electron microscope transfer function. This type of simulation has also been applied to analyzing Al/Si interface structures (Legoues et al, 1986) and interpreting zeolite pore structures (Krakow, 1984a). Until this time, however, these real time simulation programs were not applied to analyzing grain boundary atomic structure for various microscope operating conditions and voltages and exploring the limits of possible resolution.…”

Section: Introductionmentioning

confidence: 99%

Real time computer simulation of electron microscope images with tilted illumination: Grain boundary applications

Krakow¹

1991

J. Elec. Microsc. Tech.

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Computer programs have been developed to simulate electron microscope images from digitized graphically represented model structures. Via a television rate image processing system, these programs allow real time, interactive modification of the microscope objective lens parameters, incident beam inclination, and incident beam energy. In addition to explaining the computational methods, the need for using tilted beam illumination is explored to extend microscope resolution. For this study, the subject of grain boundary imaging is analyzed for a copper sigma = 5, 36.9 degrees, (310) tilt boundary with a [001] common rotation axis. The Cu [200] lattice spacings of approximately 1.8A on both sides of the interface cannot be reliably resolved under axial illumination conditions in a 200 kV microscope. Therefore, either tilted beam modes or higher incident beam energies were explored and the types of image features correlated with atomic position data through the digital frame store system.

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Atomic structure of the epitaxial Al–Si interface

Cited by 82 publications

References 11 publications

Ultrathin Al layers on Si(111) and Si(100): structures and phase transitions

Ultrathin Al layers on Si(111) and Si(100): structures and phase transitions

Hydrogen Segregation To Interfaces

Real time computer simulation of electron microscope images with tilted illumination: Grain boundary applications

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