Atomic surface control of Ge(100) in MOCVD reactors coated with (Ga)As residuals

Paszuk, Agnieszka; Supplie, Oliver; Brückner, Sebastian; Barrigón, Enrique; May, Matthias M.; Nandy, Manali; Gieß, Aaron; Dobrich, Anja; Kleinschmidt, Peter; Rey‐Stolle, Ignacio; Hannappel, Thomas

doi:10.1016/j.apsusc.2021.150513

Cited by 6 publications

(17 citation statements)

References 34 publications

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“…In other words, the Ge(100):As surface prepared with TBAs in GaAs-rich ambience exhibits As dimers oriented perpendicular to the step edges (‘A-type’, compare Figure b). In contrast, ‘B-type’ As dimers oriented parallel to the step edges (not shown here) develop on the Ge(100):As surface, when it is prepared with TBAs supply in Ga-free ambience.…”

Section: Introductionmentioning

confidence: 79%

“…The "epi-ready" Ge(100) substrates were deoxidized by annealing under H 2 carrier gas flow at an elevated temperature above 600 °C in order to prepare the As-terminated, (1 × 2) reconstructed Ge(100) surface. 19 The entire process was controlled in situ by RAS (LayTec EpiRAS-200). 22 Prior to the heteroepitaxial growth of the target III-P buffer layer, the surface was annealed under different TBP precursor flows: samples annealed with high or low molar flow of TBP refer to 'high TBP' and 'low TBP'.…”

Section: ■ Experimental Sectionmentioning

confidence: 99%

“…16,19,20 In MOVPE reactors with non-negligible GaAs utilization, TBAs supply suppresses the desorption of Ga from the GaAs-coated reactor parts and its adsorption on the Ge(100) surface. 19,21 Due to an additional interaction of the TBAs precursor with GaAs-rich ambience, the thermodynamically stable surface reconstruction of Ge(100):As consists of As dimers rotated by 90°compared to the preparation with TBAs in Ga-free ambience. 19 In other words, the Ge(100):As surface prepared with TBAs in GaAs-rich ambience exhibits As dimers oriented perpendicular to the step edges ('A-type', compare Figure 1b).…”

Section: ■ Introductionmentioning

confidence: 99%

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Optical In Situ Studies of Ge(100) Interfacial Exchange Reactions in GaAs-Rich MOVPE Reactors for Low-Defect III-P Growth

Nandy

Paszuk

Hanke

et al. 2023

ACS Appl. Electron. Mater.

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For vertical-cavity surface-emitting lasers (VCSELs) or photoelectrochemical devices and high efficient III-V/Ge(100) photovoltaics, preparation of double-atomic steps on Ge(100) substrates is highly recommended in order to avoid anti-phase boundaries in the III-V buffer layers. These Ge(100) surfaces were investigated in detail under As- and GaAs-rich MOVPE reactor conditions. During initial growth of III-P buffer layers, however, on an atomically well-ordered Ge(100):As surface, As-P exchange takes place, during which double-layer steps should be preserved. Here, we apply in situ monitoring to study the interaction of P with vicinal Ge(100):As surfaces under realistic, GaAs-rich CVD reactor conditions at growth temperature. In situ optical spectroscopy in combination with surface science techniques in ultra-high vacuum ambience is used to investigate the Ge(100) surface. We show that different Ge(100):As/P heterointerfaces are formed depending on the applied molar flow of phosphorus precursors. Despite the lattice-matched quality of the probing III-P layer, this critical heterointerface impacts significantly the surface roughness and the formation of crystal defects in the subsequently grown III-P buffer layers.

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Section: Introductionmentioning

confidence: 79%

Section: ■ Experimental Sectionmentioning

confidence: 99%

Section: ■ Introductionmentioning

confidence: 99%

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Optical In Situ Studies of Ge(100) Interfacial Exchange Reactions in GaAs-Rich MOVPE Reactors for Low-Defect III-P Growth

Nandy

Paszuk

Hanke

et al. 2023

ACS Appl. Electron. Mater.

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“…Before epitaxial growth the GaAs(100) and Ge(100) substrates were deoxidized under tertiarybutylarsine (TBAs) at 640 °C for the first one and at 650 °C for the second. The preparation of the Ge(100) substrate for the III-V epitaxy is described in more detail in [32].…”

Section: Sample Preparation By Mocvdmentioning

confidence: 99%

Tapered Cross-Section Photoelectron Spectroscopy Provides Insights into the Buried Interfaces of III-V Semiconductor Devices

Maheu

Pour

Damestoy

et al. 2022

Preprint

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Interfaces are key elements that define electronic properties of the final device. Inevitably, the active interfaces of III-V semiconductor devices are buried and it is therefore not straightforward to characterize them. The Tapered Cross-Section Photoelectron Spectroscopy (TCS-PES) approach is a promising method to address such a challenge. For the first time, we demonstrate the TCS-PES on III-V architectures. A MULTIPREPTM polishing system that enables controlling the angle between the sample holder and the polishing plate has been employed to improve reproducibility of the polishing procedure. With such equipment, we demonstrate that preparing the TCS of III-V semiconductor devices with tapering angles lower than 0.02° is possible. The TCS-PES provides then information about the buried interfaces of Ge|GaInP and GaAs|GaInP layer stacks, prepared by metalorganic chemical vapor deposition (MOCVD). Both, chemical and electronic properties have been measured by PES. It evidences that the preparation of the TCSs under an uncontrolled atmosphere modifies the pristine properties of the critical buried heterointerfaces. Surface states and reaction layers are created on the TCS surface, which restrict unambiguous conclusions on buried interface energetics.

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“…The preparation of the Ge(100) substrate for the III-V epitaxy is described in more detail in a previous work. [32] Epilayers were grown at 600 C lattice-matched to either Ge(100)…”

Section: Sample Preparation By Mocvdmentioning

confidence: 99%

Tapered Cross-Section Photoelectron Spectroscopy Provides Insights into the Buried Interfaces of III-V Semiconductor Devices

Maheu

Pour

Damestoy

et al. 2022

Preprint

Self Cite

View full text Add to dashboard Cite

Interfaces are key elements that define electronic properties of the final device. Inevitably, most of the active interfaces of III-V semiconductor devices are buried and it is therefore not straightforward to characterize them. The Tapered Cross-Section Photoelectron Spectroscopy (TCS-PES) approach is promising to address such a challenge. We demonstrate here that the TCS-PES can be used to study the relevant heterojunction in epitaxial III-V architectures prepared by metalorganic chemical vapor deposition. A MULTIPREPTM polishing system that enables controlling the angle between the sample holder and the polishing plate has been employed to improve the reproducibility of the polishing procedure. With this procedure, we demonstrate that preparing the TCS of III-V semiconductor devices with tapering angles lower than 0.02° is possible. The PES provides then information about the buried interfaces of Ge|GaInP and GaAs|GaInP layer stacks. Both, chemical and electronic properties have been measured by PES. It evidences that the preparation of the TCSs under an uncontrolled atmosphere modifies the pristine properties of the critical buried heterointerfaces. Surface states and reaction layers are created on the TCS surface, which restrict unambiguous conclusions on buried interface energetics.

show abstract

Atomic surface control of Ge(100) in MOCVD reactors coated with (Ga)As residuals

Cited by 6 publications

References 34 publications

Optical In Situ Studies of Ge(100) Interfacial Exchange Reactions in GaAs-Rich MOVPE Reactors for Low-Defect III-P Growth

Optical In Situ Studies of Ge(100) Interfacial Exchange Reactions in GaAs-Rich MOVPE Reactors for Low-Defect III-P Growth

Tapered Cross-Section Photoelectron Spectroscopy Provides Insights into the Buried Interfaces of III-V Semiconductor Devices

Tapered Cross-Section Photoelectron Spectroscopy Provides Insights into the Buried Interfaces of III-V Semiconductor Devices

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