Atomic transport in ceramics induced by electronic energy deposition (invited)

Ion-induced amorphization in ceramic materials

“…Bolse et al concluded that Eq. (3) is in good agreement with the values of S et deduced from the mixing experiments for various materials including sapphire as well [25]. Thus it is supported by several independent experiments that Eq.…”

“…[17,[19][20][21][22][23][24][25] justified the validity of Eq. (3) in sapphire with the g and a(0) values typical for insulators.…”

Behavior of crystalline silicon under huge electronic excitations: A transient thermal spike description

“…However in this ion regime mixing occurs at interface of Ni/Si for electronic energy loss larger than 25 (8) keV/nm for Ni (Si). Thus the melting of Ni would appear by energy transfer from the Si only at the interface with a mixing rate which is governed by the less sensitive material as expressed by Bolse et al [80].…”

Ion beam induced surface and interface engineering

“…As the threshold of intermixing is higher compared to metal-oxides/SiO 2 [588], it is assumed that in case of metaloxides/Si the threshold is determined by the Si layer. In contrast to other systems for TiO 2 /Si a nonlinear scaling of the interface broadening with the ion fluence is observed, indicating mixing driven by a chemical solid state reaction.…”