Atomically controlled electrochemical nucleation at superionic solid electrolyte surfaces

Valov, Ilia; Sapezanskaia, Ina; Nayak, Alpana; Tsuruoka, Tohru; Bredow, Thomas; Hasegawa, Tsuyoshi; Staikov, G.; Aono, Masakazu; Waser, Rainer

doi:10.1038/nmat3307

Cited by 220 publications

(214 citation statements)

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“…3b), and the characteristic time was on the same order as the response of bio-synapses, i.e., tens of ms. In addition to the temperature, τ d and τ r were also functions of the voltage pulse parameters, operation history, Ag concentration, host lattice, device geometry, humidity, and other factors [37][38][39][40] , which alone or combined could be used to tune the desired dynamics for neuromorphic systems (Supplementary Fig. S6).…”

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confidence: 99%

Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing

et al. 2016

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The accumulation and extrusion of Ca 2+ in the pre-and postsynaptic compartments play a critical role in initiating plastic changes in biological synapses. To emulate this fundamental process in electronic devices, we developed diffusive Ag-in-oxide memristors with a temporal response during and after stimulation similar to that of the synaptic Ca 2+ dynamics. In situ high-resolution transmission electron microscopy and nanoparticle dynamics simulations both demonstrate that Ag atoms disperse under electrical bias and regroup spontaneously under zero bias because of interfacial energy 2 minimization, closely resembling synaptic influx and extrusion of Ca 2+ , respectively.The diffusive memristor and its dynamics enable a direct emulation of both short-and long-term plasticity of biological synapses and represent a major advancement in hardware implementation of neuromorphic functionalities.CMOS circuits have been employed to mimic synaptic Ca 2+ dynamics, but three-terminal devices bear limited resemblance to bio-counterparts at the mechanism level and require significant numbers and complex circuits to simulate synaptic behavior [1][2][3] . A substantial reduction in footprint, complexity and energy consumption can be achieved by building a two-terminal circuit element, such as a memristor directly incorporating Ca 2+ -like dynamics.Various types of memristors based on ionic drift (drift-type memristor) 4-8 have recently been utilized for this purpose in neuromorphic architectures [9][10][11][12][13][14][15] . Although qualitative synaptic functionality has been demonstrated, the fast switching and non-volatility of drift memristors optimized for memory applications do not faithfully replicate the nature of plasticity. Similar issues also exist in MOS-based memristor emulators [16][17][18] , although they are capable of simulating a variety of synaptic functions including spike-timing-dependent plasticity (STDP). Recently, Lu's group adopted second-order drift memristors to approximate the Ca 2+ dynamics of chemical synapses by utilizing thermal dissipation 19 or mobility decay 20 , which successfully demonstrated STDP with non-overlapping spikes and other synaptic functions, representing a significant step towards bio-realistic synaptic devices. This approach features repeatability and simplicity, but the significant differences of the dynamical response from actual synapses limit the fidelity and variety of desired synaptic functions. A device with similar physical behavior as the biological Ca 2+ dynamics would enable improved emulation of synaptic function and broad applications to neuromorphic computing. Here we report such an emulator, which is a memristor based on metal atom 3 diffusion and spontaneous nanoparticle formation, as determined by in situ high-resolution transmission electron microscopy (HRTEM) and nanoparticle dynamics simulations. The dynamical properties of the diffusive memristors were confirmed to be functionally equivalent to Ca 2+ in bio-synapses, and their operating characteri...

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Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing

et al. 2016

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“…In these devices, the resistive switching is normally attributed to filament formation caused by the movement of metal inclusions in the insulating dielectric film 9,10,[18][19][20] . Attempts to microscopically study the filament growth processes have been carried out using scanning probe microscopy 15,21 and highresolution transmission electron microscopy 19,20,[22][23][24] techniques. For example, a recent experiment reveals different filament growth modes 20 and shows that filament formation can be achieved in the form of metal nanoclusters.…”

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Electrochemical dynamics of nanoscale metallic inclusions in dielectrics

et al. 2014

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Nanoscale metal inclusions in or on solid-state dielectrics are an integral part of modern electrocatalysis, optoelectronics, capacitors, metamaterials and memory devices. The properties of these composite systems strongly depend on the size, dispersion of the inclusions and their chemical stability, and are usually considered constant. Here we demonstrate that nanoscale inclusions (for example, clusters) in dielectrics dynamically change their shape, size and position upon applied electric field. Through systematic in situ transmission electron microscopy studies, we show that fundamental electrochemical processes can lead to universally observed nucleation and growth of metal clusters, even for inert metals like platinum. The clusters exhibit diverse dynamic behaviours governed by kinetic factors including ion mobility and redox rates, leading to different filament growth modes and structures in memristive devices. These findings reveal the microscopic origin behind resistive switching, and also provide general guidance for the design of novel devices involving electronics and ionics.

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“…This type of memory is attractive due to its low operating power, high density, and high switching speed. 1,2 Since its discovery in 1960s, several materials have been studied as RS media, such as perovskites, 3 solid electrolytes, 4 binary transition metal oxides, 5 organics, 6 bio-materials, 7 etc. Different RS characteristics have also been observed including bipolar and unipolar switching.…”

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Electroforming-free resistive switching memory effect in transparent p-type tin monoxide

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Caraveo-Frescas

McLachlan

et al. 2014

Applied Physics Letters

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Atomically controlled electrochemical nucleation at superionic solid electrolyte surfaces

Cited by 220 publications

References 21 publications

Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing

Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing

Electrochemical dynamics of nanoscale metallic inclusions in dielectrics

Electroforming-free resistive switching memory effect in transparent p-type tin monoxide

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