Atomically Flat Iii-Antimonide Epilayers Grown Using Liquid Phase Epitaxy

Abstract

A novel process has been developed which allows the growth of device grade ultra-smooth epitaxial layers of antimonide based HI-V compounds with a controlled thickness using Liquid Phase Epitaxy (LPE). GaSb epilayers (with thickness in the range of 20-50 m) on GaSb single crystalline substrates have been grown with a root mean square surface roughness of less than 1 nm over an areaof5 §<-5 m.

Liquid phase epitaxial growth of lattice mismatched InSb, GaInAs and GaInAsSb on GaAs substrates using a quaternary melt

“…The growth setup used has been described in detail in previous papers [9,10]. Growth was initiated from a pseudo-quaternary melt comprising of binaries, InSb, GaSb and InAs on a binary substrate (GaAs in this case).…”

Growth of long wavelength InxGa1−xAsySb1−y layers on GaAs from liquid phase

“…8,9 Growth was carried out in a vertical LPE growth system. 10 During the growth experiments, a reducing atmosphere was maintained by a flow of 3% hydrogen-argon gas mixture. The substrates used were epiready semi-insulating ͑001͒ GaAs wafers of 1.5ϫ 1.5 cm 2 area ͑500 m thick͒ from Wafer Technology Ltd. LiCl-KCl eutectic mixture was used as an encapsulant which also helps in desorbing oxide from the substrate and melt prior to growth.…”