Growth of long wavelength InxGa1−xAsySb1−y layers on GaAs from liquid phase

Liquid phase epitaxial growth of lattice mismatched InSb, GaInAs and GaInAsSb on GaAs substrates using a quaternary melt

“…The growth setup used has been described in detail in previous papers [9,10]. Growth was initiated from a pseudo-quaternary melt comprising of binaries, InSb, GaSb and InAs on a binary substrate (GaAs in this case).…”

High Sensitivity Uncooled InAsSb Photoconductors with Long Wavelength

“…The thicknesses of these epilayers are about 2-10 m. The dislocation densities observed in these thin films are as high as the order of 10 7 cm -2 that are caused by a large lattice mismatch (Kumar et al, 2006). It markedly lowers the terminal performance of the detectors.…”

“…Thus it is very difficult to grow high-quality InAsSb single crystals with cutoff wavelengths of 8-12 m using conventional technologies (Kumar et al, 2006). Narrow-gap InAsSb epilayers have been grown by molecular beam epitaxy (MBE) (Chyi et al, 1988), metalorganic chemical vapor deposition (MOCVD) (Kim et al, 1996), and liquid phase epitaxy (LPE) (Dixit et al, 2004).…”

“…The difference between the composition of the epilayer and that of the melt is small. (2) In the case of LPE, all of the growth melt is removed from the substrate after finishing growth. However, in the case of ME, a portion of the melt is aliquoted onto the substrate before growth, and this melt fraction is crystallized under the flat part of the melt holder.…”

Spectroscopic ellipsometry of anodized layer on single crystal InAsSb layer grown by melt epitaxy

“…Alternative candidates for infrared applications in the spectral range 8 − 12 µm are InAsSb ternary alloys. Despite difficulty originating from large lattice mismatch between InAsSb epitaxial layers and binary compound substrates, the InAs 1−x Sb x epitaxial layers with x ≈ 0.95 and the cutoff wavelength ranging from 8 to 12 µm have been successively grown using liquid phase epitaxy [1][2][3][4]. Recently, high quality crystal layers were grown using the melt epitaxy [5,6].…”