Atomically precise impurity identification and modification on the manganese doped GaAs(110) surface with scanning tunneling microscopy

Surface Induced Asymmetry of Acceptor Wave Functions

“…A clean and atomically flat surface was obtained by cleaving the samples inside the ultrahigh vacuum STM chamber with a base pressure P < 2 Â 10 À11 torr. The topography scans were carried out on the (110) sample surface by using electrochemically etched polycrystalline tungsten tips that were further treated in vacuum as described in [11]. The measurement presented in Fig.…”

Atomic scale characterization of Mn doped InAs/GaAs quantum dots

“…16 These calculations show that the formation energy also increases for smaller InAs nanocrystals ͑300→ 500 meV͒. We suggest that this forma- 17 potential confinement and position near to the cleaved surface 18 are expected to have an impact on the wave function of the Mn acceptor. Unfortunately within a QD all these mechanisms play a complicated role and thus it is very difficult to explain at the moment why we see these specific Mn features in the dot.…”

Transport through a single donor in p-type silicon

“…For example, enhanced binding energies for impurities nearer to a surface have been reported 7,[10][11][12][13] and pronounced changes in the spatial extent of the impurity wavefunction as a function of depth have been observed. [14][15][16][17][18] Such changes in the character of these impurities can have profound affects on device performance. For these reasons, fundamental studies about the behaviour of individual impurities in semiconductors have recently garnered much attention.…”

“…Combined, this information will provide us with unique information on the influence of the local electronic environment on the properties of individual impurities. 16 In this letter, we investigate the electronic properties of single phosphorus donors in a p-type (boron) silicon host matrix buried nominally 1 nm below the (001) surface. This material system is technologically relevant for recent developments in donor based quantum computing architectures, where individual donors are placed in silicon with atomic precision using a scanning tunnelling microscope with phosphine (PH 3 ) and epitaxial silicon overgrowth.…”