The dynamic behavior of surface dimers on Ge(001) has been studied by positioning the tip of a scanning tunneling microscope over single flip-flopping dimers and measuring the tunneling current as a function of time. We observe that not just symmetric, but also asymmetric appearing dimers exhibit flipflop motion. The dynamics of flip-flopping dimers can be used to sensitively gauge the local potential landscape of the surface. Through a spatial and time-resolved measurement of the flip-flop frequency of the dimers, local strain fields near surface defects can be accurately probed. The silicon and germanium semiconductor group IV (001) surfaces are among the most frequently studied surfaces in literature [1][2][3]. Because of its obvious technological importance to the semiconductor industry, the majority of studies have, however, been devoted to the Si(001) surface rather than the closely related Ge(001) surface. Both (001) surfaces are examples of a system that exhibits both a strong short-range interaction and a weak longrange interaction. The short-range interaction leads to dimerization, i.e., a pairing of nearest-neighbor surface atoms to form a (2 1) reconstruction [4]. The weaker long-range interaction results in various higher-order surface reconstructions, such as p 2 2 and c 4 2 . In several other aspects the Ge(001) surface [2] also turns out to be very similar to the Si(001) surface [3]. The properties and possible applications resulting from the dimerized termination of both surfaces has been the topic of many recent papers, investigating, e.g., the formation of heteroepitaxial nanostructures, the chemical reactivity of the bare (001) surfaces and the application of both surfaces in high-efficiency solar cells [5][6][7][8].