Atomically resolved scanning tunneling microscopy of hydrogen-terminated Si(001) surfaces after HF cleaning

Abstract

Atomic structures of hydrogen-terminated Si͑001͒ surfaces after HF cleaning are investigated by scanning tunneling microscopy. It is revealed that the surface is macroscopically rough but is composed of terraces and steps. Inside a terrace, 1ϫ1 structures are formed. This corresponds to the ideal 1ϫ1 dihydride structure. The step edges run along the ͗110͘ direction. On the other hand, the 1ϫ1 dihydride structure disappears when the surface is subsequently rinsed with ultrapure water, because every other dihydride row of the ideal 1ϫ1 structure is preferentially etched in ultrapure water.

Probing the electronic structure at semiconductor surfaces using charge transport in nanomembranes

“…The most direct way is to repeat the measurements with H on the surface. The H-covered Si(001) surface is terminated primarily with dihydrides 17 and is quite disordered 23 . The blue curves in Fig.…”

Ion Segregation and Deliquescence of Alkali Halide Nanocrystals on SiO2

“…At close proximity (of the order of the tip radius) the contribution of the tip apex is important, while at larger separations the cantilever base is After rinsing with Millipore water for 1 min, the sample was dipped into a diluted HF solution (1 -5%) for 5 min to remove the native oxide. 40 Then it was treated with an ultraviolet ozone generator for 20 min to form a clean oxide surface. Using XPS we estimated oxide thickness to be 2 nm.…”

Magnetization reversal and magnetic anisotropies in epitaxial Fe/MgO and Fe/MgO/Fe heterostructures grown on Si(001)

“…To obtain a hydrogen terminated oxide free Si͑001͒ surface, the substrates were first dipped into an ultrasonic methanol bath for 40 s, followed by dipping for 40 s into a H 2 SO 4 ͑10%͒ solution and then rinsed in another ultrasonic methanol bath for 40 s. Finally, the substrates were dipped into a solution of HF ͑10%͒ for 40 s. In looking for an ideal 1 ϫ1 dihydride structure, it should be noted that the Si substrates after the final HF cleaning were not subjected to subsequent rinsing with ultrapure water to avoid changes in surface structure that would lead to the appearance of 2ϫ1 reconstruction. 35 The substrates were then loaded into a growth chamber with 2ϫ10…”