Atomistic Construction of Silicon Nitride Ceramic Fiber Molecular Model and Investigation of Its Mechanical Properties Based on Molecular Dynamics Simulations

Abstract

Molecular simulations are currently receiving significant attention for their ability to offer a microscopic perspective that explains macroscopic phenomena. An essential aspect is the accurate characterization of molecular structural parameters and the development of realistic numerical models. This study investigates the surface morphology and elemental distribution of silicon nitride fibers through TEM and EDS, and SEM and EDS analyses. Utilizing a customized molecular dynamics approach, molecular models of amorphous and multi-interface silicon nitride fibers with complex structures were constructed. Tensile simulations were conducted to explore correlations between performance and molecular structural composition. The results demonstrate successful construction of molecular models with amorphous, amorphous–crystalline interface, and mixed crystalline structures. Mechanical property characterization reveal the following findings: (1) The nonuniform and irregular amorphous structure causes stress concentration and crack formation under applied stress. Increased density enhances material strength but leads to higher crack sensitivity. (2) Incorporating a crystalline reinforcement phase without interfacial crosslinking increases free volume and relative tensile strength, improving toughness and reducing crack susceptibility. (3) Crosslinked interfaces effectively enhance load transfer in transitional regions, strengthening the material’s tensile strength, while increased density simultaneously reduces crack propagation.

Highly sensitive electron-beam-induced X-ray detection from liquid using SiNx membrane ultra-thinned by gas cluster ion beams

“…22) The structure of the SiNx bond network determined the mechanical properties of SiNx, 39) and its breakage led to a decrease in tensile strength. 40) Therefore, the thickness of this damaged layer was one of the factors that resulted in the decreased burst pressure of the SiNx membrane. In the case of the GCIB condition used in this experiment, the penetration depth was shallower compared with that during Ar + ion bombardment.…”