2002
DOI: 10.1103/physrevb.66.045202
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Atomistic modeling of ion channeling in Si with point defects: The role of lattice relaxation

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Cited by 19 publications
(13 citation statements)
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“…A comprehensive discussion of the method, and of the results observed for a model system composed of a fixed concentration of different kinds of point defects that are relaxed according to different interatomic potentials, has been reported in Ref. [4].…”
Section: Defect Modelingmentioning
confidence: 99%
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“…A comprehensive discussion of the method, and of the results observed for a model system composed of a fixed concentration of different kinds of point defects that are relaxed according to different interatomic potentials, has been reported in Ref. [4].…”
Section: Defect Modelingmentioning
confidence: 99%
“…So far, methods to extract quantitative information from the measurements have treated defects as atoms displaced from lattice sites, without taking into account the structural relaxation of the surrounding crystal. Although speculations about this effect were reported in the past [2,3], a simulation of ion channeling in Si containing relaxed configurations of point defects has been presented only very recently [4]. In that work, we have modeled the relaxation induced by point defects using a static energy minimization procedure based on empirical potentials.…”
Section: Introductionmentioning
confidence: 99%
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“…For this purpose we take the interstitials from step 1 which have been generated with an energy larger than 15 eV and remove those located inside the amorphous regions determined in step 3. Assuming that most of the interstitials are in the split-h1 1 0i configuration and using results from Monte Carlo simulations of RBS/C spectra [18][19][20], showing that each split-h1 10i interstitial has about twice the RBS/C efficiency of a randomly displaced atom, we count each interstitial as two displaced atoms. Each amorphous atom is counted as one displaced atom.…”
Section: Modelmentioning
confidence: 99%