Atomistic simulation of ion implantation and its application in Si technology

Structural transition from L1 phase to A1 phase in FePt films caused by ion irradiation

“…If m Ͼ M, one irradiated ion can easily alter the positions of atoms in the film. [23][24][25] Figure 4 shows the correlation between the dose of irradiation and in-plane coercivity at the optimum accelerating energies. 22 In fact, this trend coincides well with the decrease of H c and the structural change shown in Fig.…”

Competing influence of damage buildup and lattice vibrations on ion range profiles in Si

“…The phosphorus depth profiles were measured by secondary ion mass spectrometry ͑SIMS͒ at Evans East ͑East Windsor, NJ͒ using a Phi quadrupole SIMS instrument. The P detection limit in Si was 1ϫ10 15 cm Ϫ3 . The accuracy of the depth calibration was 5%-10%.…”

“…6,[13][14][15] This code treats the motion of implanted ions in the target material within the framework of binary collision approximation, i.e., by the consideration of a sequence of binary collisions with target atoms in close vicinity to the ion trajectory. The black histograms in Fig.…”

Continuum modeling of post-implantation damage and the effective plus factor in crystalline silicon at room temperature

“…Simulated damage profiles have been obtained with the Monte Carlo (MC) simulator Crystal-TRIM utilizing its full cascade capability [13]. This code has been validated over a wide range of implant conditions and species in crystalline solids.…”