Atomistic structural change of silicon surface under a nanoparticle collision

Duan, Fangli; Jianbin, Luo; Wen, Shizhu; Wang, Jiaxu

doi:10.1360/982004-472

Cited by 19 publications

(10 citation statements)

References 14 publications

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“…It was found that huge hydrostatic pressure induced in a local area could lead to the phase transformation of silicon atoms from the classical diamond structure to the metal structure, by which the material was removed in a ductile mode. Duan et al 16 and Chen et al 17,18 also found such nanopit by a particle impacting silicon surface using MD method. It was revealed that the deposition of the material from the particle to the slab could fill the surface trenches and thereby obtained smoother surface.…”

Section: Introductionmentioning

confidence: 87%

Monoatomic layer removal mechanism in chemical mechanical polishing process: A molecular dynamics study

Guo

Luo

et al. 2010

Journal of Applied Physics

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Molecular dynamics simulations of nanoscratching processes were used to study the atomic-scale removal mechanism of single crystalline silicon in chemical mechanical polishing ͑CMP͒ process and particular attention was paid to the effect of scratching depth. The simulation results under a scratching depth of 1 nm showed that a thick layer of silicon material was removed by chip formation and an amorphous layer was formed on the silicon surface after nanoscratching. By contrast, the simulation results with a depth of 0.1 nm indicated that just one monoatomic layer of workpiece was removed and a well ordered crystalline surface was obtained, which is quite consistent with previous CMP experimental results. Therefore, monoatomic layer removal mechanism was presented, by which it is considered that during CMP process the material was removed by one monoatomic layer after another, and the mechanism could provide a reasonable understanding on how the high precision surface was obtained. Also, the effects of the silica particle size and scratching velocity on the removal mechanism were investigated; the wear regimes and interatomic forces between silica particle and workpiece were studied to account for the different removal mechanisms with indentation depths of 0.1 and 1 nm.

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Section: Introductionmentioning

confidence: 87%

Monoatomic layer removal mechanism in chemical mechanical polishing process: A molecular dynamics study

Guo

Luo

et al. 2010

Journal of Applied Physics

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“…The experimental result shows that the scratch depth by a single abrasive particle on the SiO 2 wafer surface is around 0.029 nm at the normal contact load of 70 nN between the surface of particle and wafer. Similarly, by means of molecular dynamic simulation (MD), Duan et al [33] presented that the scratch depth by a single abrasive particle on the Si wafer surface was estimated to be of 0.1 nm as no residua was observed on the wafer surface. In addition, Bouvet et al [34] proposed that the roughness (RMS) of the SiO 2 wafer surface was around 0.1 nm after polishing, as illustrated in Figure 4.…”

Section: Analysis Of the Experimental Datamentioning

confidence: 99%

Research on the molecular scale material removal mechanism in chemical mechanical polishing

Wang

Zhao

2008

Sci. Bull.

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“…[10][11][12][13][14] The simulations showed that c-Si would transform into Si-II during indentation loading or a locally ordered transient structure during impact loading and then transform into amorphous phase during unloading. And the phase transformation from Si-II or the locally ordered structure to amorphous phase is a reversible process.…”

Section: Introductionmentioning

confidence: 98%

“…And the phase transformation from Si-II or the locally ordered structure to amorphous phase is a reversible process. [10][11][12] Reference 13 showed the Si-III and Si-XII would be formed under indentation loading. Reference 14 studied the change in conductivity of silicon during indentation by MD simulation.…”

Section: Introductionmentioning

confidence: 99%

Dynamic phase transformation of crystalline silicon under the dry and wet impact studied by molecular dynamics simulation

Chen

Guo

Lei

2010

Journal of Applied Physics

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Molecular dynamics simulation is applied in analyzing quantitatively the dynamic phase transformation of crystalline silicon under the dry and wet impact, respectively. At the impact loading stage, the phase transformation between fourfold silicon atoms and fivefold or threefold silicon atoms is affected only by the local pressure. The influence of the local temperature or the contact area on the phase transformation will emerge from the impact unloading stage. And the dynamic process of phase transformation between fourfold atoms and fivefold or threefold atoms will obey the Boltzmann distribution law by stages. The variance of the number of fivefold or fourfold atoms at impact loading stage is almost the same as the impact unloading stage. Furthermore, the dynamic residence time of fivefold or threefold atoms formed during the impact process will be about 250 fs. The half-life of these atoms is about 50 fs.

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Atomistic structural change of silicon surface under a nanoparticle collision

Cited by 19 publications

References 14 publications

Monoatomic layer removal mechanism in chemical mechanical polishing process: A molecular dynamics study

Monoatomic layer removal mechanism in chemical mechanical polishing process: A molecular dynamics study

Research on the molecular scale material removal mechanism in chemical mechanical polishing

Dynamic phase transformation of crystalline silicon under the dry and wet impact studied by molecular dynamics simulation

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