Atomistic View of the Autosurfactant Effect during GaN Epitaxy

King, Seth; Li, L.

doi:10.1103/physrevlett.98.206106

Cited by 14 publications

(8 citation statements)

References 15 publications

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“…Nevertheless, compared to the FWHM of ~600 arcsec for the phase segregated films, and 150 arcsec for the GaN buffer layers, both of which are grown under Ga-rich conditions (where the GaN buffer is also grown at a higher temperature), the crystallinity of these films is degraded. This is consistent with the general observation that the highest quality GaN films are grown under Ga-rich conditions as a result of the surfactant effect of the Ga adlayers 23,24 .…”

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confidence: 92%

Role of nitrogen split interstitial defects in the magnetic properties of Cu-doped GaN

Liu

Gai

2012

Phys. Rev. B

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Abstract:Cu-doped GaN thin films are grown by plasma-assisted molecular beam epitaxy. With nitrogen plasma only, films phase segregate into GaN and Cu-rich alloys. In contrast, when nitrogen-hydrogen plasma is used, the films are single-phased Ga 1-x Cu x N, with x as high as 0.04.Contrary to earlier studies, however, these films are not ferromagnetic, but rather paramagnetic in nature. First-principles calculations indicate that although each substitutional Cu Ga exhibits a moment of 1 μ B /Cu, it can be suppressed by neighboring intrinsic defects such as N splitinterstitials. PACS: 75.50.Pp, 71.15.Mb, 81.15.Hi,61.72.jj, 64.75.Qr *lianli@uwm.edu 2

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confidence: 92%

Role of nitrogen split interstitial defects in the magnetic properties of Cu-doped GaN

Liu

Gai

2012

Phys. Rev. B

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“…The adsorbed oxygen is involved in the hafnium oxidation, but not all of the oxygen atoms are embedded in the lattice, as seen from the BE(Hf met )<BE(Hf ads )<BE(HfO y ) relation (table 2). It can play the role of a surfactant [33,34] present on the surface in high concentration and increasing the adhesion probability of hafnium particles, however, not completely integrated into the lattice. At the end of the film growth, the adsorbed oxygen remains in the growth layer, with the oxygen concentration on the surface exceeding its concentration in the bulk (figure 3).…”

Section: Discussion Of Resultsmentioning

confidence: 99%

The atomic structure and chemical composition of HfOx (x < 2) films prepared by ion-beam sputtering deposition

Алиев¹,

Gerasimova²,

Кручинин³

et al. 2016

Mater. Res. Express

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Non-stoichiometric HfO x films of different chemical composition (x<2) were fabricated by ionbeam sputtering deposition (IBSD) at room temperature. The ratio of O and Hf atoms in films x was varied by setting the O 2 partial pressure in a chamber. An effect of chemical composition on the atomic structure of the films was studied by reflection high-energy electron diffraction, x-ray photoelectron spectroscopy and field emission scanning electron microscopy methods. The films were found to be amorphous, consisting only of three components: Hf-metal clusters, Hf 4 O 7 suboxide and stoichiometric HfO 2. The relative concentration of these components varies with changing x. The surface of the films contains the increased oxygen content compared to the bulk. It was found that the Hf 4 O 7 suboxide concentration is maximal at x=1.8. The concept of hafnium oxide film growth by the IBSD method is proposed to explain the lack of suboxides variety in the films and the instability of HfO 2 , when annealed at high temperature.

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“…The film surface exhibits a metallic ''1 ϫ 1'' structure which is typically seen for GaN films grown under Ga-rich conditions, consisting of ϳ2 ML Ga on top of the Ga-terminated GaN. [23][24][25] Mn was deposited on this surface at a rate of 0.1 ML/min at room temperature as well as at an elevated temperature of 300°C. STM imaging was carried out in constant current mode with an Omicron variable temperature STM interconnected to the MBE chamber.…”

Section: Methodsmentioning

confidence: 99%

Electronic structures of Mn-induced phases on GaN(0001)

Sun

2009

Phys. Rev. B

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We investigate the atomic and electronic structures of Mn-incorporated GaN͑0001͒ surface by scanning tunneling microscopy and first-principles calculations. The incorporation of Mn at room temperature initially leads to a disordered phase, and subsequently an ordered ͑3 ϫ 3͒ reconstruction at ϳ0.5 ML Mn coverage. The ͑3 ϫ 3͒ exhibits a honeycomb structure for sample bias below −0.5 V, and appears as a closed-packed structure above −1.2 V, which is attributed to antiferromagnetic ordering induced by Mn atoms. Incorporation of the same amount of Mn at an elevated substrate temperature of 300°C produces an additional phase with local ͑5 ϫ 5͒ periodicity, consisting of two types of trimers: one with three spots of equal intensity and the other with uneven intensities. This disparity in intensity can be resolved using a Fe-coated W tip, which is attributed to enhanced spin-dependent tunneling between the Mn-induced minority states and the Fe-induced states of the functionalized W tip.

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Atomistic View of the Autosurfactant Effect during GaN Epitaxy

Cited by 14 publications

References 15 publications

Role of nitrogen split interstitial defects in the magnetic properties of Cu-doped GaN

Role of nitrogen split interstitial defects in the magnetic properties of Cu-doped GaN

The atomic structure and chemical composition of HfOx (x < 2) films prepared by ion-beam sputtering deposition

Electronic structures of Mn-induced phases on GaN(0001)

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