No abstract

We report a new mechanism that does not require the formation of interfacial dislocations to mediate spiral growth during molecular beam epitaxy of Bi2Se3. Based on in situ scanning tunneling microscopy observations, we find that Bi2Se3 growth on epitaxial graphene/SiC(0001) initiates with two-dimensional (2D) nucleation, and that the spiral growth ensues with the pinning of the 2D growth fronts at jagged steps of the substrate or at domain boundaries created during the coalescence of the 2D islands. Winding of the as-created growth fronts around these pinning centers leads to spirals. The mechanism can be broadly applied to the growth of other van der Waals materials on weakly interacting substrates. We further confirm, using scanning tunneling spectroscopy, that the one-dimensional helical mode of a line defect is not supported in strong topological insulators such as Bi2Se3.

Abstract:Using scanning tunneling microscopy with Fe-coated W tips and first-principles calculations, we show that the interface of epitaxial graphene/SiC(0001) is a warped graphene layer with the periodic inclusion of hexagon-pentagon-heptagon (H 5,6,7 ) defects that break the honeycomb symmetry, thereby inducing a gap and states below E F near the K point. Although the next graphene layer assumes the perfect honeycomb lattice, its interaction with the warped layer modifies the dispersion at the Dirac point. These results explain recent angle-resolved photoemission and carbon core-level shift data, and solve the long-standing problem of the interfacial structure of epitaxial graphene on SiC(0001).

Nanoribbons are model systems for studying nanoscale effects in graphene. For ribbons with zigzag edges, tunable bandgaps have been predicted due to coupling of spin-polarized edge states, which have yet to be systematically demonstrated experimentally. Here we synthesize zigzag nanoribbons using Fe nanoparticle-assisted hydrogen etching of epitaxial graphene/ SiC(0001) in ultrahigh vacuum. We observe two gaps in their local density of states by scanning tunnelling spectroscopy. For ribbons wider than 3 nm, gaps up to 0.39 eV are found independent of width, consistent with standard density functional theory calculations. Ribbons narrower than 3 nm, however, exhibit much larger gaps that scale inversely with width, supporting quasiparticle corrections to the calculated gap. These results provide direct experimental confirmation of electron-electron interactions in gap opening in zigzag nanoribbons, and reveal a critical width of 3 nm for its onset. Our findings demonstrate that practical tunable bandgaps can be realized experimentally in zigzag nanoribbons.

When graphene is interfaced with a semiconductor, a Schottky contact forms with rectifying properties. Graphene, however, is also susceptible to the formation of ripples upon making contact with another material. Here we report intrinsic ripple-and electric field-induced effects at the graphene semiconductor Schottky junction, by comparing chemical vapourdeposited graphene transferred on semiconductor surfaces of opposite polarization-the hydrogen-terminated silicon and carbon faces of hexagonal silicon carbide. Using scanning tunnelling microscopy/spectroscopy and first-principles calculations, we show the formation of a narrow Schottky dipole barrier approximately 10 Å wide, which facilitates the observed effective electric field control of the Schottky barrier height. We further find atomic-scale spatial fluctuations in the Schottky barrier that directly follow the undulation of ripples on both graphene-silicon carbide junctions. These findings reveal fundamental properties of the graphene/semiconductor Schottky junction-a key component of vertical graphene devices that offer functionalities unattainable in planar device architecture.