Atomistic view onto solid state dewetting: Thin bismuth films with and without strain gradient

We present a study of the impeding influence of a capping, native oxide layer on the solid state dewetting of thin bismuth films on silicon(111) in vacuum. We study the temperature dependence of the film thickness and strain of the thin films through the analysis of crystal truncation rods of clean and capped bismuth films. This analysis reveals a dewetting temperature difference of 40°C between capped and uncapped films. The results are supported by scanning electron microscopy and x-ray photoelectron spectroscopy experiments. Furthermore, a model for the retarding effect of the oxide layer and the final shape of the thin film is presented.

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Effect of uniaxial deformation along the trigonal axis on the band structure of bulk bismuth

Vasilisa,

Anton,

Roman

et al. 2023

Eur. Phys. J. Plus

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Atomistic view onto solid state dewetting: Thin bismuth films with and without strain gradient

Cited by 4 publications

References 43 publications

The In-Situ TEM Isothermal Aging Evolution in a µ-Cu/NiAu/Sn/Cu Solder Joint for Full Intermetallic Compounds Interconnects of Flexible Electronics

The In-Situ TEM Isothermal Aging Evolution in a µ-Cu/NiAu/Sn/Cu Solder Joint for Full Intermetallic Compounds Interconnects of Flexible Electronics

Retarded solid state dewetting of thin bismuth films with oxide capping layer

Effect of uniaxial deformation along the trigonal axis on the band structure of bulk bismuth

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