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We present a study of the impeding influence of a capping, native oxide layer on the solid state dewetting of thin bismuth films on silicon(111) in vacuum. We study the temperature dependence of the film thickness and strain of the thin films through the analysis of crystal truncation rods of clean and capped bismuth films. This analysis reveals a dewetting temperature difference of 40°C between capped and uncapped films. The results are supported by scanning electron microscopy and x-ray photoelectron spectroscopy experiments. Furthermore, a model for the retarding effect of the oxide layer and the final shape of the thin film is presented.

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