Attainable road to the lower-k 1 extension using high-transmittance attenuated phase-shifting mask in the KrF lithography world

Kim, In-Sung; Jung, Sunggon; Kim, Hyung-Do; Yeo, Gi-Sung; Shin, In-Gyun; Lee, Jung-Hyun; Cho, Han-Ku; Moon, Joo-Tae

doi:10.1117/12.474595

Search citation statements

Order By: Relevance

Paper Sections

Select...

About Low K1 Imaging1

Introduction1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2004

2005

Publication Types

Select...

Other1

Article1

Relationship

Self Cite0

Independent2

Authors

Journals

Cited by 2 publications

(2 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…where λ is the wavelength of the light, NA the numerical aperture of the scanner and 1 k a parameter depending on the process conditions. Obviously, the resolution can be improved by migrating to a shorter wavelength and a higher numerical aperture but unfortunately a change in wavelength and numerical aperture typically requires a large capital expense and significant process development effort.…”

Section: About Low K1 Imagingmentioning

confidence: 99%

See 1 more Smart Citation

Strategies of optical proximity correction dedicated to chromeless phase lithography for 65 and 45 nm node

Robert

Thony

Lucas³

et al. 2005

Optical Microlithography XVIII

View full text Add to dashboard Cite

Section: About Low K1 Imagingmentioning

confidence: 99%

“…Moreover, various optical proximity correction strategies have been explored through a comparison between phase and chromium features such as hammerhead, zebra and scattering bars 1,2 . Indeed, depending on the density of the pattern, we can improve the contrast and the process window by changing the local transmission.…”

Section: Introductionmentioning

confidence: 99%

Strategies of optical proximity correction dedicated to chromeless phase lithography for 65 and 45 nm node

Robert

Thony

Lucas³

et al. 2005

Optical Microlithography XVIII

View full text Add to dashboard Cite

Optical Properties of Thin Amorphous Silicon Film on a Phase Shift Mask for 157 nm Lithography

Kim

Choi

et al. 2004

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

We report a detailed quantum oscillation study of the overdoped cuprate Tl 2 Ba 2 CuO 6+δ at two different doping levels (T c = 10 and 26 K). The derived Fermi surface size and topology complement earlier angle-dependent magnetoresistance studies and confirm the existence of a large quasi-cylindrical hole-doped Fermi surface with a small, but finite, c-axis warping. An accurate determination of the hole concentration reveals that superconductivity in Tl 2 Ba 2 CuO 6+δ does not follow the universal T c ( p) parabola for cuprate families and survives up to a larger doping of p c = 0.31. The observation of quantum oscillations for both dopings demonstrates that Fermi liquid behaviour is not confined to the edge of the superconducting dome, but is robust up to at least 0.3T max c . Moreover, the observation of such well-resolved oscillations implies that the physical properties of overdoped Tl 2 Ba 2 CuO 6+δ are determined by a single, spatially homogeneous electronic ground state. Finally, analysis of the different quasiparticle masses points towards a purely magnetic or electronic pairing mechanism.

show abstract

Attainable road to the lower-k 1 extension using high-transmittance attenuated phase-shifting mask in the KrF lithography world

Cited by 2 publications

References 0 publications

Strategies of optical proximity correction dedicated to chromeless phase lithography for 65 and 45 nm node

Strategies of optical proximity correction dedicated to chromeless phase lithography for 65 and 45 nm node

Optical Properties of Thin Amorphous Silicon Film on a Phase Shift Mask for 157 nm Lithography

Contact Info

Product

Resources

About