Attenuation of THz Beams: A “How to” Tutorial

Kaltenecker, Korbinian J.; Kelleher, E. J. R.; Zhou, Binbin; Jepsen, Peter Uhd

doi:10.1007/s10762-019-00608-x

Cited by 23 publications

(16 citation statements)

References 52 publications

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“…wafers in the beam path [47]. In the collimated beam path the field strength is much lower than in the focus region, and we have confirmed that any nonlinear processes in the HR-Si wafers such as impact ionization [48] are undetectable.…”

Section: Experimental Setups For Nonlinear Single-pulse and Two-dimensupporting

confidence: 66%

Subcycle Nonlinear Response of Doped 4H Silicon Carbide Revealed by Two-Dimensional Terahertz Spectroscopy

et al. 2019

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We investigate single-cycle terahertz (THz) field-induced nonlinear absorption in doped silicon carbide. We find that the nonlinear response is ultrafast, and we observe up to 20% reduction of transmission of single THz pulses at peak field strengths of 280 kV/cm. We model the field and temperature dependence of the nonlinear response by finite-difference time-domain simulation that incorporates the temporally nonlocal nonlinear conductivity of the silicon carbide. Nonlinear two-dimensional THz spectroscopy reveals that the nonlinear absorption has an ultrafast sub-picosecond recovery time, with contributions from both sumfrequency generation and four-wave mixing, in the form of a photon-echo signal. The ultrafast nonlinearity with its equally fast recovery time makes silicon carbide an interesting candidate material for extremely fast nonlinear THz modulators.

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Section: Experimental Setups For Nonlinear Single-pulse and Two-dimensupporting

confidence: 66%

Subcycle Nonlinear Response of Doped 4H Silicon Carbide Revealed by Two-Dimensional Terahertz Spectroscopy

et al. 2019

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“…1) also enables measurements on very thin sample substrates with which commercial setups usually end up with un-separable echo transients [6,27]. When the THz frequency increases, the silicon absorption becomes more noticeable and cannot be ignored [32,35] and frequency-dependent THz wave attenuation has also been reported when multiple high-resistivity Si plates were used as broadband THz attenuators [36]. Practically, with one single scan on bare substrate, the ratio T = |Ẽ (1st) sub /Ẽ (dir) sub | between the first echo and directly transmitted transients will count for all substrate relevant THz wave attenuation and give the amplitude correction term when comparing to (n sub -1) 2 /(n sub + 1) 2 .…”

Section: Resultsmentioning

confidence: 99%

Reference-free THz-TDS conductivity analysis of thin conducting films

Whelan¹,

Shen²,

Luo³

et al. 2020

Opt. Express

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“…This way, the electric field profile of the THz pulse can be measured. Figure 8a shows the THz pulse energy vs. the laser pulse energy (before frequency doubling), where the THz energy was before attenuation by the silicon wafer [36]. The experimental result shows that the maximum THz energy of 480 nJ can be obtained with the laser energy of 18.8 mJ, which leads to the THz field strength of 242 kV/cm.…”

Section: Experimental Results For Two-color-based Intense Thz Wave Generation Using the Laser Amplifiermentioning

confidence: 99%

Development of a 1 TW/35 fs Ti:sapphire Laser Amplifier and Generation of Intense THz Waves Using Two-Color Laser Filamentation

et al. 2021

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We developed a compact Ti:sapphire laser amplifier system in our laboratory, generating intense laser pulses with a peak power of >1 TW (terawatt), a pulse duration of 34 fs (femtosecond), a central wavelength of 800 nm, and a repetition rate of 10 Hz. The laser amplifier system consists of a mode-locked Ti:sapphire oscillator, a regenerative amplifier, and a single-side-pumped 4-pass amplifier. The chirped-pulse amplification (CPA)-based laser amplifier was found to provide an energy of 49.6 mJ after compression by gratings in air, where the pumping fluence of 1.88 J/cm2 was used. The amplified spontaneous emission (ASE) level was measured to be lower than 10−7, and ps-prepulses were in 10−4 or lower level. The developed laser amplifier system was used for the generation of intense THz (terahertz) waves by focusing the original (800 nm) and second harmonic (400 nm) laser pulses in air. The THz pulse energy was shown to be saturated in the high laser energy regime, and this phenomenon was confirmed by fully electromagnetic, relativistic, and self-consistent particle-in-cell (PIC) simulations.

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Attenuation of THz Beams: A “How to” Tutorial

Cited by 23 publications

References 52 publications

Subcycle Nonlinear Response of Doped 4H Silicon Carbide Revealed by Two-Dimensional Terahertz Spectroscopy

Subcycle Nonlinear Response of Doped 4H Silicon Carbide Revealed by Two-Dimensional Terahertz Spectroscopy

Reference-free THz-TDS conductivity analysis of thin conducting films

Development of a 1 TW/35 fs Ti:sapphire Laser Amplifier and Generation of Intense THz Waves Using Two-Color Laser Filamentation

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