2022
DOI: 10.1038/s41586-022-05190-2
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Attosecond clocking of correlations between Bloch electrons

Abstract: Springer Nature or its licensor holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.

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Cited by 50 publications
(27 citation statements)
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“…Im Experiment können wir die Stärke der Coulomb‐Wechselwirkung einstellen, indem wir eine 60 nm dicke Probe WSe 2 mit einer atomar dünnen Schicht desselben Materials vergleichen [2]. In der ultimativ dünnen Schicht können die elektrischen Feldlinien zwischen Elektron und Loch oben und unten aus der Probe heraustreten, sodass sie nicht effektiv abgeschirmt werden.…”
Section: Abbunclassified
“…Im Experiment können wir die Stärke der Coulomb‐Wechselwirkung einstellen, indem wir eine 60 nm dicke Probe WSe 2 mit einer atomar dünnen Schicht desselben Materials vergleichen [2]. In der ultimativ dünnen Schicht können die elektrischen Feldlinien zwischen Elektron und Loch oben und unten aus der Probe heraustreten, sodass sie nicht effektiv abgeschirmt werden.…”
Section: Abbunclassified
“…In conventional III-V semiconductors the screening leads to exciton binding energies of only a few meV and Coulomb resonances Ref. [21] found significant influences of Coulomb correlations on strong-field interactions by comparing high-order side-band generation in bulk and ML WSe 2 . Here, we study the influence of Coulomb correlations on HHG at the example of ML MoS 2 .…”
mentioning
confidence: 99%
“…We found here that these effects are of minor importance in the regime of extreme strong-field interactions. Thus, we can use the same methodology based on the regular semiconductor Bloch equations (SBE) as described in Refs [7,19,21]. to study the influence of Coulomb correlations on HHG in ML-TMDC.…”
mentioning
confidence: 99%
“…As an analogue of the interband HHG, high-order sideband generation (HSG) [23,24] has also received considerable interest since the last decade [25][26][27][28][29][30][31][32][33]. HSG occurs in semiconductors when an electron-hole pair is created by a relatively weak near-infrared (NIR) laser with a photon energy Ω close to the bandgap E g and then accelerated by a strong terahertz (THz) field with a photon energy ω E g .…”
mentioning
confidence: 99%
“…Frequency combs of sidebands with orders n > 100 (66 sidebands) have been produced from HSG [29]. HSG has also played a role in probing Berry curvatures [28], band structures [31], and electron correlations [33].…”
mentioning
confidence: 99%