Au/GLAD-SnO2 nanowire array-based fast response Schottky UV detector

Chetri, Priyanka; Dhar, Jay Chandra

doi:10.1007/s00339-019-2590-0

Cited by 30 publications

(25 citation statements)

References 22 publications

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“…It is well known that Si-based photodetectors have weak responsivity in the UV light range. Nevertheless, SnO 2 -based photodetectors exhibit outstanding UV responsivity. − In this study, the high UV responsivity of SnO 2 /T-Si PDs is attributed to the outstanding optoelectronic properties of SnO 2 films.…”

Section: Resultsmentioning

confidence: 73%

Surface Engineering in SnO₂/Si for High-Performance Broadband Photodetectors

Sun

et al. 2023

ACS Appl. Mater. Interfaces

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Silicon-based photodetectors are important optoelectronic devices in many fields. Many investigations have been conducted to improve the performance of silicon-based photodetectors, such as spectral responsivity and sensitivity in the ultraviolet band. In this study, we combine the surface structure engineering of silicon with wide-bandgap semiconductor SnO2 films to realize textured Si-based heterojunction photodetectors. The obtained SnO2/T-Si photodetectors exhibit high responsivity ranging from ultraviolet to near-infrared light. Under a bias voltage of 1 V, SnO2/T-Si photodetectors (PDs) with an inverted pyramid texture show the best performance, and the typical responsivities to ultraviolet, visible, and near-infrared light are 0.512, 0.538, 1.88 (800 nm, 67.7 μW/cm2) A/W@1 V, respectively. The photodetectors exhibit short rise and decay times of 18.07 and 29.16 ms, respectively. Our results demonstrate that SnO2/T-Si can serve as a high-performance broadband photodetector.

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Section: Resultsmentioning

confidence: 73%

Surface Engineering in SnO₂/Si for High-Performance Broadband Photodetectors

Sun

et al. 2023

ACS Appl. Mater. Interfaces

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“…The micropillar gap, area fractions, heights can be easily defined by the UV-lithography and the DRIE etching step. The nanowire heights, material type can be optimized in the GLAD step by changing the deposition time and using more thermally insulative target materials such as titanium oxide (TiO2) ( Fresno et al, 2021 ) and tin oxide (SnO2) ( Chetri and Dhar, 2019 ). The gap of the GLAD nanowires is more difficult to change mostly determined by the initial nucleation but can be controlled in certain degrees using a prefabricated seed layer ( Dick et al, 2003 ).…”

Section: Resultsmentioning

confidence: 99%

Bio-Inspired Hierarchical Micro/Nanostructured Surfaces for Superhydrophobic and Anti-Ice Applications

Zhang

Uzoma

Xiaoyang

et al. 2022

Front. Bioeng. Biotechnol.

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We report a scalable and cost-effective fabrication approach for constructing bio-inspired micro/nanostructured surfaces. It involves silicon microstructure etching using a deep reactive ion etch (DRIE) method, nanowires deposition via glancing angle deposition (GLAD) process, and fluorocarbon thin film deposition. Compared with the smooth, microstructured, and nanostructured surfaces, the hierarchical micro/nanostructured surfaces obtained via this method showed the highest water contact angle of ∼161° and a low sliding angle of <10°. It also offered long ice delay times of 2313 s and 1658 s at −5°C and −10°C respectively, more than 10 times longer than smooth surfaces indicating excellent anti-icing properties and offering promising applications in low-temperature environments. These analyses further proved that the surface structures have a significant influence on surface wettability and anti-icing behavior. Hence, the GLAD process which is versatile and cost-effective offers the freedom of constructing nanostructures on top of microstructures to achieve the required objective in the fabrication of micro/nanostructured surfaces when compared to other fabrication techniques.

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“…To further discuss the performance of SnO 2 /NiO PD, Figure 3g presents some other recently reported PDs with high detectivity. [25][26][27][28][29][30][31][32][33][34][35][36][37][38][39][40] A more detailed summary of recent publications of PDs can be found in Table S1, Supporting Information. Figure 3e,f illustrates the working principle of SnO 2 -NiO PD.…”

Section: Resultsmentioning

confidence: 99%

“…It suggests that the SnO 2 ‐NiO PD has a remarkable sensitivity to weak UV illumination, which demonstrates its great potentials in applications for low UV density conditions and related cases. To further discuss the performance of SnO 2 /NiO PD, Figure g presents some other recently reported PDs with high detectivity . A more detailed summary of recent publications of PDs can be found in Table S1, Supporting Information.…”

Section: Resultsmentioning

confidence: 99%

Cross‐Bar SnO₂‐NiO Nanofiber‐Array‐Based Transparent Photodetectors with High Detectivity

Long

Yang

et al. 2019

Adv Elect Materials

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nanostructures thanks to their unique properties including high surface-tovolume ratio and anisotropic transmission characteristics, were intensively explored in the past decades. [12-18] However, there still remain several key challenges to realize practical high-performance transparent PDs. First, most 1D UV PDs, which are synthesized through high-temperature processes, including chemical vapor deposition (CVD) and hydrothermal methods, are tangled nanowires or vertically formed nanoarrays, which can hardly reach a visible light transmittance (higher than 80%) despite the wide band gaps of active semiconductors. Second, most PDs are desired with a self-powered feature to meet the demand of low power consumption. However, it is more difficult to realize such features in a transparent optoelectronic device, as it needs to allow most of visible light to pass through, while, at the same time, to guarantee enough light absorption to power the device. To address these problems, we developed a novel fabric-like p-n junction PD with aligned p-NiO nanofibers interlaced by aligned n-SnO 2 nanofibers. A well-designed crossbar structure, which is realized by a simple and effective electrospinning technique, not only provided the device with good transparency, but also made it possible to reach a high responsivity and high detectivity. Moreover, the PD could work in a selfpowered mode due to the photovoltaic effect from the crossbar p-n junctions. SnO 2 , with a wide band gap of 3.6 eV, [19,20] high electron concentration, and high physicochemical stability, is a good n-type candidate for high-performance UV PDs. Most SnO 2-based PDs have shown a good responsivity with high photocurrents. However, they also have a high dark current because of their high carrier density, thus resulting in a low detectivity. By contrast, for a p-n junction, the built-in electric field may block the carrier paths through the interface, and the dark current can thus be greatly reduced. As a result, the detectivity can be improved, especially under a reverse bias. In this work, an crossbar structure was employed to fabricate transparent p-n junction-based photodetectors. For the p-type candidate, NiO, a widely studied p-type semiconductor in various optoelectronic devices, was selected to build a type-II heterojunction with SnO 2 for the effective charge separation. An crossbar structure is employed to design a transparent p-n junctionbased photodetector. The device consisting of aligned n-SnO 2 and p-NiO nanofibers is prepared via a mature electrospinning process that is suitable for commercial applications. It exhibits a high detectivity of 2.33 × 10 13 Jones under 250 nm illumination at −5 V, outperforming most state-of-art SnO 2-based UV photodetectors. It is also endowed with a self-powered feature due to a photovoltaic effect from the p-n junction, resulting in a photocurrent of 10 −10 A, responsivity of 30.29 mA W −1 at 0 V bias, and detectivity of 2.24 × 10 11 Jones at 0.05 V bias. Moreover, the device is highly transparent (over 90% tow...

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Au/GLAD-SnO2 nanowire array-based fast response Schottky UV detector

Cited by 30 publications

References 22 publications

Surface Engineering in SnO₂/Si for High-Performance Broadband Photodetectors

Surface Engineering in SnO₂/Si for High-Performance Broadband Photodetectors

Bio-Inspired Hierarchical Micro/Nanostructured Surfaces for Superhydrophobic and Anti-Ice Applications

Cross‐Bar SnO₂‐NiO Nanofiber‐Array‐Based Transparent Photodetectors with High Detectivity

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Au/GLAD-SnO2 nanowire array-based fast response Schottky UV detector

Cited by 30 publications

References 22 publications

Surface Engineering in SnO2/Si for High-Performance Broadband Photodetectors

Surface Engineering in SnO2/Si for High-Performance Broadband Photodetectors

Bio-Inspired Hierarchical Micro/Nanostructured Surfaces for Superhydrophobic and Anti-Ice Applications

Cross‐Bar SnO2‐NiO Nanofiber‐Array‐Based Transparent Photodetectors with High Detectivity

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Surface Engineering in SnO₂/Si for High-Performance Broadband Photodetectors

Surface Engineering in SnO₂/Si for High-Performance Broadband Photodetectors

Cross‐Bar SnO₂‐NiO Nanofiber‐Array‐Based Transparent Photodetectors with High Detectivity