Auger-Electron Emission Resulting from the Annihilation of Core Electrons with Low-Energy Positrons

Weiss, A. H.; Mayer, R.; Jibaly, M.; Lei, Chun; Mehl, D.; Lynn, K. G.

doi:10.1103/physrevlett.61.2245

Cited by 149 publications

(73 citation statements)

References 9 publications

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“…An important implication of the inner-shell annihilation is the emission of Auger electrons and consequent formation of doubly ionized atoms. The positron-induced Auger electron emission has been observed in condensed matter [11].…”

Section: Introductionmentioning

confidence: 99%

Variational calculation of low-energy positron life time in Xe atoms

Abdel-Mageed

2010

Braz. J. Phys.

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The least-squares variational method (LSVM) is used for determining trial wavefunctions representing lowenergy positron-xenon elastic scattering, which are used to determine the positron lifetime. The trial function is taken to depend on several adjustable parameters, and is improved iteratively by increasing the number of terms. The bound state wavefunctions are obtained using Hartree-Fock-Slater method. The 2γ-rays annihilation rates of the positron in xenon atoms below Positronuim (Ps) formation threshold are calculated. Polarization potential V pl (r) is applied to enhance annihilation rates and lifetime. The present results of annihilation parameters are consistent with semiempirical, theoretical and experimental results.

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Section: Introductionmentioning

confidence: 99%

Variational calculation of low-energy positron life time in Xe atoms

Abdel-Mageed

2010

Braz. J. Phys.

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“…Weiss et al [17] were first to demonstrate that a low-energy positron creates core holes through matter-antimatter annihilation generating Auger electrons with high efficiency and extremely low secondary electron background. The latter is feasible to obtain by using incident beam energy below the secondary electron emission threshold.…”

Section: à3mentioning

confidence: 99%

Ion-Beam-Induced Defects in CMOS Technology: Methods of Study

Fedorenko¹

2017

Ion Implantation - Research and Application

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Ion implantation is a nonequilibrium doping technique, which introduces impurity atoms into a solid regardless of thermodynamic considerations. The formation of metastable alloys above the solubility limit, minimized contribution of lateral diffusion processes in device fabrication, and possibility to reach high concentrations of doping impurities can be considered as distinct advantages of ion implantation. Due to excellent controllability, uniformity, and the dose insensitive relative accuracy ion implantation has grown to be the principal doping technology used in the manufacturing of integrated circuits. Originally developed from particle accelerator technology, ion implanters operate in the energy range from tens eV to several MeV (corresponding to a few nms to several microns in depth range). Ion implantation introduces point defects in solids. Very minute concentrations of defects and impurities in semiconductors drastically alter their electrical and optical properties. This chapter presents methods of defect spectroscopy to study the defect origin and characterize the defect density of states in thin film and semiconductor interfaces. The methods considered are positron annihilation spectroscopy, electron spin resonance, and approaches for electrical characterization of semiconductor devices.

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“…In contrast, in positron-annihilation-induced Auger electron spectroscopy (PAES), positrons of a few tens eV implanted into the solid do not induce the Auger process, but some are trapped in a potential well at the surface and annihilate the inner atomic shell electrons, creating core-pore excitations, resulting in Auger electron emmission. 33,34 According to this principle, PAES examines only the topmost atomic layer. 35 The energy of the implanted positrons is very low, so that no background of secondary electrons is observed in the higher energy range of released Auger electrons.…”

Section: Application Of Positron Beams 5·1 Positron-annihilation-indumentioning

confidence: 99%

Analytical Methods Using a Positron Microprobe

2009

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Positrons have been used for material analysis not only because of their novel characteristics, such as an ability to detect open-volume type defects in materials, but also because interactions with solids differ from those of electrons in such processes as scattering and diffraction. Monoenergetic positron beams and microbeams were developed in the 1980s, and positron experiments have made progress in material analyses. In this article we review the fundamental technique of microbeam fabrication, especially using a magnetically-guided positron beam, its extension to various analytical methods, and expectations for future research.

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Auger-Electron Emission Resulting from the Annihilation of Core Electrons with Low-Energy Positrons

Cited by 149 publications

References 9 publications

Variational calculation of low-energy positron life time in Xe atoms

Variational calculation of low-energy positron life time in Xe atoms

Ion-Beam-Induced Defects in CMOS Technology: Methods of Study

Analytical Methods Using a Positron Microprobe

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