Auger recombination in 4H-SiC: Unusual temperature behavior

Galeckas, Augustinas; Linnros, Jan; Grivickas, V.; Lindefelt, Ulf; Hallin, Christer

doi:10.1063/1.120309

Cited by 131 publications

(59 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In the simplified model, we neglected sample heating by free carrier absorption and used the constant B and C values (see Eq. (2)) [16], while the C p value is known to be temperature dependent [15]. A value of ∂n/∂T , to our knowledge, is not determined for SiC, therefore we have used that of silicon, equal to 2 · 10 4 K −1 [8].…”

Section: Resultsmentioning

confidence: 99%

Temperature-dependent nonequilibrium carrier dynamics in epitaxial and bulk 4H-SiC

Neimontas¹

2006

Lithuanian J. Phys.

View full text Add to dashboard Cite

We present the results of nonequilibrium carrier dynamics in highly excited 4H-SiC crystals -n-type epilayers and semiinsulating wafer. Picosecond four-wave mixing measurements have been carried out at various grating periods, excitation energies, temperatures, and have provided the bipolar diffusion coefficients and lifetimes of nonequilibrium carriers. We show that the phonon scattering contributes mainly to the carrier mobility in 100-300 K temperature range, providing µ ∼ T −1.5 dependence. Lattice heating was observed, and it dominated in refractive index modulation at T < 100 K, thus precluding the studies of carrier dynamics at low temperatures.

show abstract

Section: Resultsmentioning

confidence: 99%

Temperature-dependent nonequilibrium carrier dynamics in epitaxial and bulk 4H-SiC

Neimontas¹

2006

Lithuanian J. Phys.

View full text Add to dashboard Cite

show abstract

“…During the simulations the fundamental 4H-SiC physical models including the incomplete dopant activation, the SRH and Auger recombination processes, the impact ionization, the apparent band-gap narrowing, the carrier mobility and the carrier lifetime as function both of doping concentration and temperature, have been carefully taken into account [3][4][5][6][7]. It must be noted that the simulation setup assumed in this work is supported by experimental results in a wide range of currents and temperatures obtained on Al implanted 4H-SiC p + -i-n diodes [8,9] which represent, in fact, the embedded structure of the proposed n-channel BMFET.…”

Section: Design and Simulationmentioning

confidence: 99%

Static and transient analysis of a 4H-SiC trench Bipolar Mode FET with normally-off characteristics

Pezzimenti

Corte

2012

CAS 2012 (International Semiconductor Conference)

View full text Add to dashboard Cite

Steady-state and switching characteristics of a normally-off 4H-SiC Bipolar Mode FET (BMFET) are investigated in a wide range of temperatures by means of an intensive simulation analysis useful for a first time ever realization of this device in SiC. An output drain current density up to 500 A/cm 2 , an high current gain and an on-resistance as low as 2 mΩ·cm 2 , are calculated when the gate regions are forward biased. The turn-off delay is in the order of 5 ns and the blocking voltage is higher than 1.2 kV. This study is supported by experimental data on the gate-drain and gate-source p-i-n diodes embedded in the BMFET structure.

show abstract

“…Incomplete Ionization model: One of the negative properties in 4H-SiC is the relatively deep dopant levels (EC-ED (N) ≈ 90meV and EA-EV (Al) ≈ 200meV) [24]. With such large ionization energies in 4H-SiC, dopants in 4H-SiC are actually in the freeze-out regime at room temperature.…”

Section: B Models and Parameters Used In Simulationsmentioning

confidence: 99%

Design, Simulation, and Fabrication of 4H-SiC Power SBDs With SIPOS FP Structure

Song

Tang

Yuan

et al. 2015

IEEE Trans. Device Mater. Relib.

View full text Add to dashboard Cite

we introduce a field plate termination (FP) structure utilizing semi-insulating polycrystalline silicon (SIPOS) as the dielectrics in 4H-SiC Schottky barriers diodes (SBDs) in order to relieve the electric field enhancement at the junction corners and enhance the breakdown voltage of devices. In SIPOS FP structures, the maximum electric field (EM) within the dielectrics can be significant reduced in reverse blocking states due to the SIPOS with higher dielectric constant (k). Simulation and fabrication of 4H-SiC SBDs with the novel and traditional SiO2 FP were carried out. The simulations were performed using the commercial 2-D device simulator DESSIS. Compared to a traditional SiO2 FP structure device, the optimal design of the new type of SIPOS FP structure will lead to an increase of 780V in the breakdown voltage and a 44.8% EM reduction. From the experimental results, it has been proven that the new type of SIPOS FP structure indeed relieves the maximum electric field in the dielectric layer while simultaneously realizes an enhanced device breakdown voltage as high as 1630V, which is about 74.5% of the ideal theoretical breakdown voltage. Index Terms-Field plate, SIPOS dielectrics, 4H-SiC, Breakdown

show abstract

Auger recombination in 4H-SiC: Unusual temperature behavior

Cited by 131 publications

References 9 publications

Temperature-dependent nonequilibrium carrier dynamics in epitaxial and bulk 4H-SiC

Temperature-dependent nonequilibrium carrier dynamics in epitaxial and bulk 4H-SiC

Static and transient analysis of a 4H-SiC trench Bipolar Mode FET with normally-off characteristics

Design, Simulation, and Fabrication of 4H-SiC Power SBDs With SIPOS FP Structure

Contact Info

Product

Resources

About