Auger recombination in Dirac materials: A tangle of many-body effects

Alymov, Georgy; Vyurkov, V.; Ryzhii, V.; Satou, Akira; Svintsov, Dmitry

doi:10.1103/physrevb.97.205411

Cited by 56 publications

(50 citation statements)

References 64 publications

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“…The direct Auger processes in the GLs are virtually prohibited [55] due to the linearity of the carrier energy spectra [1]. More complex Auger processes are also effectively suppressed [56] The role of the Auger interband processes will be briefly considered in the Appendix.…”

Section: Device Structurementioning

confidence: 99%

Negative terahertz conductivity and amplification of surface plasmons in graphene–black phosphorus injection laser heterostructures

et al. 2019

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We propose and evaluate the heterostructure based on the graphene-layer (GL) with the lateral electron injection from the side contacts and the hole vertical injection via the black phosphorus layer (PL) (p + PL-PL-GL heterostructure). Due to a relatively small energy of the holes injected from the PL into the GL (about 100 meV, smaller than the energy of optical phonons in the GL which is about 200 meV), the hole injection can effectively cool down the two-dimensional electronhole plasma in the GL. This simplifies the realization of the interband population inversion and the achievement of the negative dynamic conductivity in the terahertz (THz) frequency range enabling the amplification of the surface plasmon modes. The later can lead to the plasmon lasing. The conversion of the plasmons into the output radiation can be used for a new types of the THz sources.

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Section: Device Structurementioning

confidence: 99%

Negative terahertz conductivity and amplification of surface plasmons in graphene–black phosphorus injection laser heterostructures

et al. 2019

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“…In the latter case, AR cannot be fundamentally switched off due to many-particle effects. 20,21 In this paper, we theoretically show that mercury-cadmiumtelluride quantum wells (HgCdTe QWs) below the topological transition represent an ideal platform for AR suppression and FIR lasing. A quasi-relativistic electron-hole dispersion is realized therein as a result of hybridization between topological states at two adjacent CdyHg1−yTe/HgTe interfaces.…”

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confidence: 99%

Fundamental Limits to Far-Infrared Lasing in Auger-Suppressed HgCdTe Quantum Wells

et al. 2019

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A challenge of bridging the terahertz gap with semiconductor lasers faces an inevitable problem of enhanced non-radiative Auger recombination with reduction of photon energy. We show that this problem can be mitigated in mercury-cadmium-telluride quantum wells (HgCdTe QWs) wherein the Auger process is suppressed due to formation of quasi-relativistic electron-hole dispersion imposing strong energy-momentum restrictions on recombining carriers. Such dispersion is formed upon interaction of topological states at the two QW interfaces. We characterize the lasing properties of HgCdTe QWs quantitatively by constructing a microscopic theory for recombination, absorption, and gain, and show the feasibility of lasing down to ∼ 50 µm at liquid nitrogen temperature with threshold currents two orders of magnitude lower than in existing lasers. Our findings comply with recent experimental data on stimulated far-infrared emission from HgCdTe QWs and show the directions toward achievement of maximum possible lasing wavelength.

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“…However, it has been shown, that these processes becomes non-vanishing either due to the extent of a small difference between the carrier dispersion from the linear one (e.g. trigonal warping) or due to many body effects such as plasmonassisted processes or additional scattering by an impurity or phonon [32][33][34][35][36][37]. A suppression of the Auger recombination has also been addressed for HgTe-based QW structures with symmetric dispersion laws in conduction and valence bands [38].…”

Section: Introductionmentioning

confidence: 99%

Impact Ionization Induced by Terahertz Radiation in HgTe Quantum Wells of Critical Thickness

Hubmann

Budkin

Urban

et al. 2020

J Infrared Milli Terahz Waves

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We report on the observation of terahertz (THz) radiation induced band-to-band impact ionization in HgTe quantum well (QW) structures of critical thickness, which are characterized by a nearly linear energy dispersion. The THz electric field drives the carriers initializing electron-hole pair generation. The carrier multiplication is observed for photon energies less than the energy gap under the condition that the product of the radiation angular frequency ω and momentum relaxation time τ l larger than unity. In this case, the charge carriers acquire high energies solely because of collisions in the presence of a high-frequency electric field. The developed microscopic theory shows that the probability of the light impact ionization is proportional to exp(−E 2 0 /E 2 ), with the radiation electric field amplitude E and the characteristic field parameter E0. As observed in experiment, it exhibits a strong frequency dependence for ωτ 1 characterized by the characteristic field E0 linearly increasing with the radiation frequency ω.

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Auger recombination in Dirac materials: A tangle of many-body effects

Cited by 56 publications

References 64 publications

Negative terahertz conductivity and amplification of surface plasmons in graphene–black phosphorus injection laser heterostructures

Negative terahertz conductivity and amplification of surface plasmons in graphene–black phosphorus injection laser heterostructures

Fundamental Limits to Far-Infrared Lasing in Auger-Suppressed HgCdTe Quantum Wells

Impact Ionization Induced by Terahertz Radiation in HgTe Quantum Wells of Critical Thickness

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