Author's response to Sanchez et al. entitled “On the importance of training aids and the definition of an explosive odor signature: Commentary on Kranz et al.”

Kranz, William; Goodpaster, John V.

doi:10.1016/j.forsciint.2015.03.015

Cited by 6 publications

(3 citation statements)

References 2 publications

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“…Semiconductor presenting topological properties as Bi 2 Te 3 , Bi 2 Se 3 , CdTe and others have always been considered excellent thermoelectric materials [1] well before the discovery of their topological properties. The most efficient Peltier cells are obtained in PbTe [2,3] and CdTe [4]. Recently, there is a great interest in exploring the connection between the thermoelectric and topological properties [5][6][7][8] of these topological insulator (TI) materials.…”

Section: Introductionmentioning

confidence: 99%

Quasiparticle cooling using a topological insulator–superconductor hybrid junction

Bercioux

Lucignano

2018

Eur. Phys. J. Spec. Top.

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In this work, we investigate the thermoelectric properties of a hybrid junction realised coupling surface states of a three-dimensional topological insulator with a conventional s-wave superconductor. We focus on the ballistic devices and study the quasiparticle flow, carrying both electric and thermal currents, adopting a scattering matrix approach based on conventional Blonder-Tinkham-Klapwijk formalism. We calculate the cooling efficiency of the junction as a function of the microscopic parameters of the normal region (i.e. the chemical potential etc.). The cooling power increases when moving from a regime of Andreev specular-reflection to a regime where Andreev retro-reflection dominates. Differently from the case of a conventional N/S interface, we can achieve efficient cooling of the normal region, without including any explicit impurity scattering at the interface, to increase normal reflection.PACS numbers:

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Section: Introductionmentioning

confidence: 99%

Quasiparticle cooling using a topological insulator–superconductor hybrid junction

Bercioux

Lucignano

2018

Eur. Phys. J. Spec. Top.

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“…In some cases a Te layer was added on top of the MoO x . CdTe was deposited by vacuum evaporation at 350 °C followed by a recrystallization and doping treatment [6]. CdS was deposited by chemical bath deposition (CBD).…”

Section: Methodsmentioning

confidence: 99%

Progress towards 14% efficient CdTe solar cells in substrate configuration

Kranz

Schmitt

Gretener

et al. 2013

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)

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CdTe solar cells are conventionally grown in superstrate configuration. However, the growth in substrate configuration offers more control of junction properties as recrystallization of CdTe and junction formation with CdS can be decoupled. In this paper the influence of various annealing treatment conditions of the CdS layer on its morphology and phase and on the device properties is presented. The presence of CdCl 2 during this annealing treatment is important for the phase change of the CdS layer to hexagonal wurtzite and for high efficiencies. A CdCl 2 treatment of the CdS at 360 °C improves the efficiency of the device without the adverse effect of pinhole formation in the CdS. CdTe solar cells in substrate configuration with more than 13% efficiency are achieved as a progress towards 14% efficiency.

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“…Cadmium telluride (CdTe) thin-films are the most promising photovoltaic (PV) materials for lightweight and flexible solar cells because of their excellent light absorption (i.e., direct band-gap of 1.45 eV) and low-cost manufacturing processes. To improve the specific power (kW kg -1 ) and mechanical flexibility, recent research has focused on new PV design and low-temperature (< 450 °C) deposition processes, where the active n-CdS/p-CdTe layers are directly deposited on lightweight substrates, such as polymer [1,2] and metal foils [3]. However, the measured PV efficiencies of these low-temperature devices (< 14 %) are still far below than those fabricated using high-temperature processing methods (> 22 %).…”

mentioning

confidence: 99%

Structural and Compositional Properties of Recrystallized CdS/CdTe Thin-Films Grown on Oxidized Silicon Substrates

2019

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Cadmium telluride (CdTe) thin-films are the most promising photovoltaic (PV) materials for lightweight and flexible solar cells because of their excellent light absorption (i.e., direct band-gap of 1.45 eV) and low-cost manufacturing processes. To improve the specific power (kW kg -1 ) and mechanical flexibility, recent research has focused on new PV design and low-temperature (< 450 °C) deposition processes, where the active n-CdS/p-CdTe layers are directly deposited on lightweight substrates, such as polymer [1, 2] and metal foils [3]. However, the measured PV efficiencies of these low-temperature devices (< 14 %) are still far below than those fabricated using high-temperature processing methods (> 22 %). Recognizing this temperature imparity, our approach is based on high-temperature CdTe synthesis (> 450 °C) on an oxidized silicon wafer (Si/SiO2) that can decouple the high-temperature grain growth and the subsequent thin-film lift-off / transfer processes (Figure 1). This method enables the integration of the high-quality CdS/CdTe active layers on lightweight and flexible substrates (e.g., plastic, fabric, cellulose paper) that have having the limited temperature tolerance.

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Author's response to Sanchez et al. entitled “On the importance of training aids and the definition of an explosive odor signature: Commentary on Kranz et al.”

Cited by 6 publications

References 2 publications

Quasiparticle cooling using a topological insulator–superconductor hybrid junction

Quasiparticle cooling using a topological insulator–superconductor hybrid junction

Progress towards 14% efficient CdTe solar cells in substrate configuration

Structural and Compositional Properties of Recrystallized CdS/CdTe Thin-Films Grown on Oxidized Silicon Substrates

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