Auto-Drawing and Functionalization by Vapor-Phase Assisted Polymerization on Solid Surface

Gomi, Satoshi; Andou, Yoshito; Nishida, Haruo

doi:10.2494/photopolymer.29.17

Cited by 3 publications

(4 citation statements)

References 24 publications

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“…The polymerization of N -isopropylacrylamide (NIPAAm), styrene, and acrylic acid (AA) could be conducted at different areas separately by changing the monomer and X – Y stages. 173 The photoactivity of the polymer could also be used to produce patterns after the polymer film was coated. Utilizing the photoactivity of PPMA, a pattern could be provided by using e-beam irradiation.…”

Section: Controls Of Anisotropymentioning

confidence: 99%

Vapor-Deposited Polymer Films and Structure: Methods and Applications

et al. 2023

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Vapor deposition of polymers is known to result in densified thin films, and recent developments have advanced these polymers with interesting fabrication techniques to a variety of controlled structures other than thin films. With the advantages of chemical modification and functionalization of these polymers, advancements have combined both the physical and chemical properties of these vapor-deposited polymers to obtain controlled anisotropic polymers, including layer-by-layer, gradient, hierarchical, porosity, and the combination of the above, meaning that the produced polymers are functional and are addressed in devised physical configurations and chemical compositions. The main purpose of using polymer coatings as a tool for surface modification is to provide additional properties that decouple the natural properties of the underlying materials (including metals, polymers, oxides/ceramics, glass, silicon, etc.), and recent advancements have rendered novel insights into combined physical and chemical properties to fulfill the increasing needs of sophisticated requirements of materials for users. The review herein intends to deliver messages of recent progress of the advancements of vapor-deposited polymers, with discussions of the variations of the physical structures and chemical functionalities, and how these two aspects are integrated with novel fabrication techniques.

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Section: Controls Of Anisotropymentioning

confidence: 99%

Vapor-Deposited Polymer Films and Structure: Methods and Applications

et al. 2023

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“…OTS Polymeric C [370][371][372][373][374][375][376][377][378] Si/SiO 2 , MUO OTS, ODPA, Cu, Ru, Fe, Pt Si:H 275 Si SiO 2 pc-Si 379, 380 Si, SiO-OH SiO 2 4 sec (@ 85°C) PECVD SiO x (x = 1-2) [640][641][642][643][644] W, Pt/Cu Unipolar 5, 1 100 -10 4 >60 >10 4 sec (@ 100°C) PECVD SiO x (x = 1-2) [640][641][642][643][644] W, Pt/Cu Bipolar 1, −2 100 -10 4 >60 >10 4 sec (@ 100°C) Spin-on SiOCH [645][646][647] W, Pt/Cu, Ag Bipolar 0.7, −0.15 >10 4 500-2000 >10 3 sec (@ 85°C) PECVD SiOCH 635 W, Pt/Cu, Ag Bipolar LPCVD SiN x :H (x ∼ = 1.3) [649][650][651] Si/Ni, Au Bipolar 4, −2 10-10 5 50-100 >10 4 sec (@ 100°C) PECVD SiN x :H (x = 0.6-1.2) [651][652][653][654][655] W, Al, Pt/Ag, Ti, Ni Bipolar 1-2, −1-−2 70-10 3 >10 3 >10 5 sec (@ 85°C) SiC x :H (x ∼ = 1) [659][660][661][662][663][664] Pt, Au, W/Cu, Ag Bipolar 1-2, −1-−2 100-10 8 >10 4 >10 4 sec (@ 85°C) Polymer (x = 1 -> 3) [665][666][667...…”

Section: Siochmentioning

confidence: 99%

“…It is also possible to utilize SAMS and other selectively formed organic layers directly as nucleation layers for selective growth. This approach has been demonstrated by Jeon 325,369 and others [370][371][372][373] for selectively growing various polymer films relative to Si, SiO 2 , and other organic layers. In this approach, the terminal end of the SAM contains a reactive end group that acts as a seed site for the incoming CVD or ALD chemistry to nucleate and grow directly on the SAM.…”

Section: Siochmentioning

confidence: 99%

Review—Beyond the Highs and Lows: A Perspective on the Future of Dielectrics Research for Nanoelectronic Devices

Jenkins

Austin

Conley

et al. 2019

ECS J. Solid State Sci. Technol.

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High-dielectric constant (high-k) gate oxides and low-dielectric constant (low-k) interlayer dielectrics (ILD) have dominated the nanoelectronic materials research scene over the past two decades, but they have recently reached a state of maturity and perhaps the limits of their scaling. Based on this, there is a need for a systematic review summarizing not only the historic research and achievements on high-k and low-k dielectrics, but also emerging device applications as well as an outlook of future challenges. We begin by first reviewing the factors that drove the emergence of low-k and high-k materials in nanoelectronics as ILD and gate dielectric materials, respectively, and the challenges and limits these materials ultimately approached in terms of permittivity scaling. We then illustrate that gate dielectric and ILD applications represent just a small fraction of the numerous dielectrics utilized in present day nanoelectronic products where permittivity scaling is now being increasingly demanded for materials such as dielectric spacers, trench isolation, and etch stopping layers. We conclude by examining the numerous new applications for dielectric materials that are emerging as the semiconductor industry transitions to novel patterning schemes, prepares for life post CMOS scaling, and explores ways to natively embed device functionality in the metal interconnect. For the former, we specifically examine the “colorful” requirements for the various enabling dielectric hardmask and spacer materials utilized in pitch division-multi-pattern processes and then discuss the role that selective area deposition of dielectrics and metals could play in reducing the complexity of such patterning processes. For the latter, we review the use of both high-k and low-k dielectrics in various metal-insulator-metal (MIM) structures as Fermi level de-pinning layers, tunnel diodes, and back-end-of-line (BEOL) compatible capacitive and resistive switching random access memory (ReRAM) elements. We further examine how dielectrics can hinder or aid new forms of computing such as quantum and neuromorphic in reaching their full potential. In conclusion, we find that while the field of dielectrics has a long history, it remains vibrant with numerous exciting new and old research vectors awaiting further exploration.

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“…In a subsequent report, the use of an auto-drawing system, consisting of an optical fiber irradiation apparatus and a programmed manipulator for the spatially selective activation of the initiator, was demonstrated ( Fig. 2 ) [ 17 ].…”

Section: Reviewmentioning

confidence: 99%

Nanotopographical control of surfaces using chemical vapor deposition processes

Koenig¹,

Lahann²

2017

Beilstein J. Nanotechnol.

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In recent years much work has been conducted in order to create patterned and structured polymer coatings using vapor deposition techniques – not only via post-deposition treatment, but also directly during the deposition process. Two-dimensional and three-dimensional structures can be achieved via various vapor deposition strategies, for instance, using masks, exploiting surface properties that lead to spatially selective deposition, via the use of additional porogens or by employing oblique angle polymerization deposition. Here, we provide a concise review of these studies.

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Auto-Drawing and Functionalization by Vapor-Phase Assisted Polymerization on Solid Surface

Cited by 3 publications

References 24 publications

Vapor-Deposited Polymer Films and Structure: Methods and Applications

Vapor-Deposited Polymer Films and Structure: Methods and Applications

Review—Beyond the Highs and Lows: A Perspective on the Future of Dielectrics Research for Nanoelectronic Devices

Nanotopographical control of surfaces using chemical vapor deposition processes

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