Automated Parameter Extraction Software for High-Voltage, High-Frequency SiC Power MOSFETs

Abstract

Previously developed IGBT Model Parameter extrACtion Tools (IMPACT) are extended to include the material parameters and device structures of SiC power devices. These software tools extract the data necessary to establish a library of SiC power device component models and provide a method for quantitatively comparing different device types and establishing performance metrics for device development. In this paper, the SiC--IMPACT parameter extraction sequence is demonstrated using several 10 kV SiC power MOSFET device design types and the results are compared with results for 2-kV SiC Power MOSFETs and for commercial Silicon power MOSFETs with voltage blocking capabilities of 55 V, 400 V, and 1 kV. *

Physics-based electro-thermal Saber model and parameter extraction for high-voltage SiC buffer-layer IGBTs

“…Previously, a software package called IGBT Model Parameter extrACtion Tools (IMPACT) [6,8] for extracting parameters of silicon IGBTs was extended to include SiC power MOSFETs in a software package called SiC-IMPACT [7]. In this work, the SiC-IMPACT software tools are extended to include features that are needed for SiC IGBTs, including an alternate Tau-Effective-Extraction Program (TAUEFFMSR) to extract the base lifetime (τHL) and buffer-layer lifetime (τbuf) model parameters.…”

“…In this program, the on-state voltage versus VGS for a constant current is used to extract KPlin, KPlin1, RS, NB. The values of KPlin, KPlin1, RS, and NB parameters are calculated from the model equations [6][7][8] that are valid for the linear region. In this LINMSR program the values of the parameters extracted from the SATMSR program are used as known values in the equations.…”

“…In this work, the model is extended to include the device and material properties of SiC by incorporating the material properties described in [6,7] into the models described in [4,5]. To implement the high voltage 4H-SiC buffer layer N-IGBT electro-thermal model into the Saber® circuit simulator, the nonlinear functions of the system variables listed in Table I as in [4] and the power MOSFET equations listed in Table II as in [7] are combined. The new extended model can be used to describe the static and dynamic behaviors for both Si and 4H-SiC buffer layer N-IGBT.…”

“…The previously developed silicon buffer layer IGBT model was implemented into the Saber® circuit simulator using the Saber® MAST modeling language [4,5]. In this work, the model is extended to include the device and material properties of SiC by incorporating the material properties described in [6,7] into the models described in [4,5]. To implement the high voltage 4H-SiC buffer layer N-IGBT electro-thermal model into the Saber® circuit simulator, the nonlinear functions of the system variables listed in Table I as in [4] and the power MOSFET equations listed in Table II as in [7] are combined.…”

Long-Term Stability Test System for High-Voltage, High-Frequency SiC Power Devices

“…7 shows two pop-up panels that are accessible from the "Options" pull down menu located at the top of the user interface. Option (a) Device Options is used to set the maximum safe power supply voltage and duty cycle for the DUT, the MOSFET parameters (obtained from IMPACT tools [11]) used to calculate the junction temperature Tj(th) from the on-state voltage, the thermal resistances used to calculate the junction temperature and device power dissipation from the measured heat sink and ambient temperatures. Option (b) Circuit Options is used to set up the maximum Slew Rate and Mininum…”