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The purpose of this paper is to introduce a dynamic electro-thermal simulation and analysis approach for device design and short-circuit safe-operating-area (SOA) characterization using a physics-based electro-thermal Saber®* model. Model parameter extraction, simulation, and validation results are given for several commercially available 4H-silicon carbide (SiC) power MOSFETs with a voltage rating of 1200 V and with current ratings of 31.6 A and 42 A. The electro-thermal model and simulations are used to analyze the short-circuit SOA including the measured failure time (t failure) and simulated device internal junction temperature (T j) at failure for different gate voltages (V GS) and drain voltages (V DS).

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Previously developed IGBT Model Parameter extrACtion Tools (IMPACT) are extended to include the material parameters and device structures of SiC power devices. These software tools extract the data necessary to establish a library of SiC power device component models and provide a method for quantitatively comparing different device types and establishing performance metrics for device development. In this paper, the SiC--IMPACT parameter extraction sequence is demonstrated using several 10 kV SiC power MOSFET device design types and the results are compared with results for 2-kV SiC Power MOSFETs and for commercial Silicon power MOSFETs with voltage blocking capabilities of 55 V, 400 V, and 1 kV. *

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