High-Voltage Isolated Gate Drive Circuit for 10 kV, 100 A SiC MOSFET/JBS Power Modules

Berning, D.W.; Duong, T.H.; Ortiz-Rodríguez, J.M.; Rivera-Lopez, A.; Hefner, Allen R.

doi:10.1109/08ias.2008.365

Cited by 26 publications

(12 citation statements)

References 4 publications

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“…The short-circuit current is measured as the voltage across the sensing resistor (R sense = 0.05 ). The circuit uses an isolated gate drive (represented by the transformer) [3] to drive the device under test (DUT). The V GS pulse amplitude is controlled by using the adjustable power supply and a zener clamp diode to provide a rectangular pulse that is referenced to the source of the DUT.…”

Section: Introductionmentioning

confidence: 99%

Electro-thermal simulation of 1200 V 4H-SiC MOSFET short-circuit SOA

Duong

Ortiz

Berning

et al. 2015

2015 IEEE 27th International Symposium on Power Semiconductor Devices &Amp; IC's (ISPSD)

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The purpose of this paper is to introduce a dynamic electro-thermal simulation and analysis approach for device design and short-circuit safe-operating-area (SOA) characterization using a physics-based electro-thermal Saber®* model. Model parameter extraction, simulation, and validation results are given for several commercially available 4H-silicon carbide (SiC) power MOSFETs with a voltage rating of 1200 V and with current ratings of 31.6 A and 42 A. The electro-thermal model and simulations are used to analyze the short-circuit SOA including the measured failure time (t failure) and simulated device internal junction temperature (T j) at failure for different gate voltages (V GS) and drain voltages (V DS).

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Section: Introductionmentioning

confidence: 99%

Electro-thermal simulation of 1200 V 4H-SiC MOSFET short-circuit SOA

Duong

Ortiz

Berning

et al. 2015

2015 IEEE 27th International Symposium on Power Semiconductor Devices &Amp; IC's (ISPSD)

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“…The results indicate that, compared to the Si PiN diode, the SiC JBS diode has lower leakage current for anode voltage levels below 4 kV for all temperatures and that its leakage has less variation with temperature but more variation with voltage. -pulse switching test circuit and timing waveforms that are used to measure the circuit interaction between the Si IGBT and the SiC JBS and SiC PiN diodes [10] using the gate driver of [11]. Note that this circuit can emulate a half-bridge module where the IGBT anti-parallel diode of the high-side switch is recovered by the low-side switch, or this circuit can also represent a single switch and commutating diode in a boost converter.…”

Section: Medium-voltage Sic Jbs Diode Developmentmentioning

confidence: 99%

Comparison of 4.5 kV SiC JBS and Si PiN diodes for 4.5 kV Si IGBT anti-parallel diode applications

Duong¹,

Hefner²,

Hobart³

et al. 2011

2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and Exposition (APEC)

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A new 60 A, 4.5 kV SiC JBS diode is presented, and its performance is compared to a Si PiN diode used as the antiparallel diode for 4.5 kV Si IGBTs. The I-V, C-V, reverse recovery, and reverse leakage characteristics of both diode types are measured. The devices are also characterized as the anti-parallel diode for a 4.5 kV Si IGBT using a recently developed high-voltage, double-pulse switching test system. The results indicate that SiC JBS diodes reduce IGBT turn-on switching loses by about a factor of three in practical applications. Furthermore, the peak IGBT current at turn-on is typically reduced by a factor of six, resulting in substantially lower IGBT stress. Circuit simulator models for the 4.5 kV SiC JBS and Si PiN diodes are also developed and compared with measurements.

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“…Due to the vast possibilities for ≥10 kV SiC devices, many resources have been devoted to their development. To date, the majority of the reports on these devices have been focused on the characterization [7], [13], [22], [29], [32], [33], gate driver design [34], [35], [36], [37], and converter evaluation [22], [33], [38]. However, the packaging of the semiconductor die has a significant impact on the performance, and is currently limiting their full potential; namely, their switching speed, voltage and current ratings, and operating temperature.…”

Section: Introductionmentioning

confidence: 99%

Design and Experimental Validation of a Wire-Bond-Less 10-kV SiC MOSFET Power Module

DiMarino

Mouawad

Johnson

et al. 2020

IEEE J. Emerg. Sel. Topics Power Electron.

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Wide-bandgap power devices with voltage ratings exceeding 10 kV have the potential to revolutionize medium-and high-voltage systems due to their high-speed switching and lower on-state losses. However, present power module packages are limiting the performance of these unique switches. The objective of this work is to push the boundaries of high-density, high-speed, 10 kV power module packaging. The proposed package addresses the well-known electromagnetic and thermal challenges, as well as the more recent and prominent electrostatic and electromagnetic interference issues associated with high-speed, 10 kV devices. The module achieves low and balanced parasitic inductances, resulting in a record switching speed of 250 V/ns with negligible ringing and voltage overshoot. An integrated screen reduces the commonmode current that is generated by these fast voltage transients by ten times. This screen connection simultaneously increases the partial discharge inception voltage by more than 50 %. A compact, medium-voltage termination and system interface design is also proposed in this work. With the integrated jet-impingement cooler, the power module prototype achieves a power density of 4 W/mm 3 . This paper presents the design, prototyping, and testing of this optimized package for 10 kV SiC MOSFETs.

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High-Voltage Isolated Gate Drive Circuit for 10 kV, 100 A SiC MOSFET/JBS Power Modules

Cited by 26 publications

References 4 publications

Electro-thermal simulation of 1200 V 4H-SiC MOSFET short-circuit SOA

Electro-thermal simulation of 1200 V 4H-SiC MOSFET short-circuit SOA

Comparison of 4.5 kV SiC JBS and Si PiN diodes for 4.5 kV Si IGBT anti-parallel diode applications

Design and Experimental Validation of a Wire-Bond-Less 10-kV SiC MOSFET Power Module

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