The advancement of silicon carbide (SiC) power devices with voltage ratings exceeding 10 kV is expected to revolutionize medium-and high-voltage systems. However, present power module packages are limiting the performance of these unique switches. The objective of this research is to push the boundaries of high-density, high-speed, 10 kV power module packaging. The proposed package addresses the well-known electromagnetic and thermal challenges, as well as the more recent and prominent electrostatic and electromagnetic interference (EMI) issues associated with high-speed, 10 kV devices. The high-speed switching and high voltage rating of these devices causes significant EMI and high electric field. Existing power module packages are unable to address these challenges, resulting in detrimental EMI and partial discharge that limit the converter operation. This paper presents the design and testing of a 10 kV SiC MOSFET power module that switches at a record 250 V/ns without compromising the signal and ground integrity due to an integrated screen reduces the common-mode current by ten times. This screen connection simultaneously increases the partial discharge inception voltage by more than 50 %. With the integrated cooling system, the power module prototype achieves a power density of 4 W/mm 3 . 1

Wide-bandgap power devices with voltage ratings exceeding 10 kV have the potential to revolutionize medium-and high-voltage systems due to their high-speed switching and lower on-state losses. However, present power module packages are limiting the performance of these unique switches. The objective of this work is to push the boundaries of high-density, high-speed, 10 kV power module packaging. The proposed package addresses the well-known electromagnetic and thermal challenges, as well as the more recent and prominent electrostatic and electromagnetic interference issues associated with high-speed, 10 kV devices. The module achieves low and balanced parasitic inductances, resulting in a record switching speed of 250 V/ns with negligible ringing and voltage overshoot. An integrated screen reduces the commonmode current that is generated by these fast voltage transients by ten times. This screen connection simultaneously increases the partial discharge inception voltage by more than 50 %. A compact, medium-voltage termination and system interface design is also proposed in this work. With the integrated jet-impingement cooler, the power module prototype achieves a power density of 4 W/mm 3 . This paper presents the design, prototyping, and testing of this optimized package for 10 kV SiC MOSFETs.

Pure molybdenum powder was sintered using Spark Plasma Sintering under various temperatures, and holding times, under a pressure of 77 MPa and a heating rate at 700°C/min. After sintering, a carbide layer was observed at the surface. The carbide layer thickness, the relative density of the sample as well as the microhardness and the grain size of Mo were measured. The carbide thickness depends on time and temperature and it was found that the carbide layer grows in a parabolic manner, with the activation energy of carbon diffusion in Mo being equal to 34 Kcal/mol. The densification of Mo is controlled mainly by the sintering temperature and the holding time. The molybdenum powder was successfully consolidated by SPS in short times. A relative density of 100% is achieved at a sintering temperature of 1850°C and a holding time of 30 minutes. It was shown that the hardness decreases slightly with temperature and time. It should be related to the increase in grain size with the sintering temperature and time.