Modeling the inter-electrode capacitances of Si CoolMOS transistors for circuit simulation of high efficiency power systems

Yang, Nanying; Ortiz, J. M.; Duong, T.H.; Hefner, Allen R.; Meehan, Kathleen; Lai, Jih-Sheng

doi:10.1109/ecce.2010.5618009

Cited by 9 publications

(5 citation statements)

References 14 publications

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“…In other words, while the electrical device is physics-based, the temperature dependence of those parameters are behavioral. A physics-based model for a CoolMOS MOSFET is developed from the Hefner model in [13] since the internal Hefner IGBT model contains an equivalent internal MOSFET.…”

Section: Electro-thermal Model -Electricalmentioning

confidence: 99%

Section: Power Mosfetmentioning

confidence: 99%

“…3 developed to model the inter-electrode capacitances of CoolMOS in [57]. Due to the complexity of the numerical model described for the nonlinear capacitance in [57], the model implemented in SABER has been simplified and linearized using Taylor series. Additional fitting parameters have been included to gain better accuracy than the numerical model in the areas of transition points going from the accumulation to depletion regions.…”

Section: Power Mosfetmentioning

confidence: 99%

“…The MOSFET uses the model developed in [13] and [57] which is based on the MOSFET model within the Hefner IGBT model but has been modified for a CoolMOS device. In particular the highly non-linear device capacitance inherent to CoolMOS technology has been captured.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Design Optimization of Hybrid-Switch Soft-Switching Inverters Using Multiscale Electrothermal Simulation

Reichl

Lai

Hefner

et al. 2017

IEEE Trans. Power Electron.

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The development of a fully automated tool that is used to optimize the design of a hybrid switch soft-switching inverter using a library of dynamic electro-thermal component models parameterized in terms of electrical, structural and material properties is presented. A multi-scale electro-thermal simulation approach is developed allowing for a large number of parametric studies involving multiple design variables to be considered, drastically reducing simulation time.Traditionally, electro-thermal simulation and analysis has been used to predict the behavior of pre-existing designs. While the traditional approach to electro-thermal analysis can help shape cooling requirements and heat sink designs to maintain certain junction temperatures, there is no guarantee that the design under study is the most optimal. This dissertation uses electro-thermal simulation to guarantee an optimal design and thus truly minimizing cooling requirements and improving device reliability.The proposed optimization tool is used to provide a step-by-step design optimization of a twocoupled magnetic hybrid soft-switching inverter. The soft-switching inverter uses a two-coupled magnetic approach for transformer reset condition [1], a variable timing control for achieving ZVS over the entire load range [2], and utilizes a hybrid switch approach for the main device [3].

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Section: Electro-thermal Model -Electricalmentioning

confidence: 99%

Section: Power Mosfetmentioning

confidence: 99%

Section: Power Mosfetmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Design Optimization of Hybrid-Switch Soft-Switching Inverters Using Multiscale Electrothermal Simulation

Reichl

Lai

Hefner

et al. 2017

IEEE Trans. Power Electron.

Self Cite

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show abstract

“…Accordingly, this paper focuses on the characterization of C iss (V gs ), C gs (V gs ) and C gd (V gs ) in the range of (V gs,off , V gs,on ), where V gs,off and V gs,on are the maximum recommended turn-off and turn-on gate-source control voltages. This is of high importance for emerging SiC power MOSFETs with respect to: i) designing the gate circuit [12], [19], ii) evaluating gate bias instability [20], iii) extracting electrically active traps and defects at the MOS interface [21]- [23], and iv) parametrization of compact device models by including V gs dependent capacitance models as suggested in [4], [5], [14], [15], [24].…”

Section: Introductionmentioning

confidence: 99%

Gate Capacitance Characterization of Silicon Carbide and Silicon Power mosfets Revisited

Stark

Tsibizov

Kovacevic-Badstuebner

et al. 2022

IEEE Trans. Power Electron.

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Capacitance-voltage (C-V) gate characteristics of power MOSFETs play an important role in the dynamic device performance. C-V characterization of the MOSFET gate structure is a necessary step for evaluating the MOSFET switching behavior and calibrating lumped equivalent capacitances of MOSFET compact models. This paper presents a comprehensive analysis on gate C-V measurements of silicon (Si) and silicon carbide (SiC) power MOSFETs leading to clear measurement guidelines. The requirements on the measurement setup, the selection of equivalent models used for the MOSFET capacitance extraction, and the measurement frequency range are defined and supported by an accurate C-V characterization of several Siand SiC power MOSFETs. The results show that the gate-source and gate-drain capacitances should be extracted at a frequency of some ten kHz rather than at 1 MHz, as typically adopted in datasheets, in order to avoid parasitic effects introduced by the measurement setup and package. Furthermore, analytical expressions for C dg and Csg were derived based on a lumped equivalent circuit, which explain the influence of the measurement setup and the package parasitics on the C-V measurements. Non-ideal measurement conditions are identified and correlated to the differences in C-V extraction with either parallel or series equivalent model. A new method is proposed to estimate the ratio of the MOSFET's on-state resistance components R ch and R drift based on the presented C-V measurement guidelines, which is applicable to all three-and four-terminal power MOSFETs.

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Power CoolMOS transistor electrothermal model for PSpice simulation

Laafar

Maali

Baraka

et al. 2021

Analog Integr Circ Sig Process

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Modeling the inter-electrode capacitances of Si CoolMOS transistors for circuit simulation of high efficiency power systems

Cited by 9 publications

References 14 publications

Design Optimization of Hybrid-Switch Soft-Switching Inverters Using Multiscale Electrothermal Simulation

Design Optimization of Hybrid-Switch Soft-Switching Inverters Using Multiscale Electrothermal Simulation

Gate Capacitance Characterization of Silicon Carbide and Silicon Power mosfets Revisited

Power CoolMOS transistor electrothermal model for PSpice simulation

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