2016
DOI: 10.1038/srep21676
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Automatic graphene transfer system for improved material quality and efficiency

Abstract: In most applications based on chemical vapor deposition (CVD) graphene, the transfer from the growth to the target substrate is a critical step for the final device performance. Manual procedures are time consuming and depend on handling skills, whereas existing automatic roll-to-roll methods work well for flexible substrates but tend to induce mechanical damage in rigid ones. A new system that automatically transfers CVD graphene to an arbitrary target substrate has been developed. The process is based on the… Show more

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Cited by 44 publications
(44 citation statements)
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“…The decrease in ω 2D and ω G modes toward lower wavenumbers indicates a decrease in the graphene doping level from ∼3 × 10 12 to ∼10 12 cm –2 when AlO x is introduced under CM at 80 °C, while the mechanical strain level remains similar in magnitude between −0.1 and −0.2% (Figure 5d). 51,52 On the other hand, when AlO x is deposited under SM at 200 °C, the doping level decreases further to <10 12 cm –2 and the mechanical strain level decreases slightly to between −0.05 and −0.15%, although the broadening in Γ 2D and Γ G indicates that the variation in the nanometer-scale strain is actually increased (Figure 5d). 53 It has been known that the presence of hydroxyl species on the SiO 2 surface induces the formation of charge trap sites that contribute to the doping level and the buckling behavior of G/SiO 2 .…”
Section: Discussionmentioning
confidence: 99%
“…The decrease in ω 2D and ω G modes toward lower wavenumbers indicates a decrease in the graphene doping level from ∼3 × 10 12 to ∼10 12 cm –2 when AlO x is introduced under CM at 80 °C, while the mechanical strain level remains similar in magnitude between −0.1 and −0.2% (Figure 5d). 51,52 On the other hand, when AlO x is deposited under SM at 200 °C, the doping level decreases further to <10 12 cm –2 and the mechanical strain level decreases slightly to between −0.05 and −0.15%, although the broadening in Γ 2D and Γ G indicates that the variation in the nanometer-scale strain is actually increased (Figure 5d). 53 It has been known that the presence of hydroxyl species on the SiO 2 surface induces the formation of charge trap sites that contribute to the doping level and the buckling behavior of G/SiO 2 .…”
Section: Discussionmentioning
confidence: 99%
“…We validate the LAT approach by comparison to two other GLC fabrication methods widely used in literature: the touch‐down method and the grid sandwich method. The three methods investigated in this paper (LAT, touch‐down and grid sandwich), require no lithographic substrate preparation or liquid handling equipment . Moreover, the methods were selected on the fact that the specimen liquid can be added as a macroscopic droplet, requiring no large volumes or micro‐spraying.…”
Section: Introductionmentioning
confidence: 99%
“…In order to exploit the promising properties of graphene in photonic integrated circuits a suitable transfer method should be developed. Several methods for the transfer of large scale graphene films have already been demonstrated [3,4], but limited work on the transfer of micron sized graphene films has been carried out and all proposed methods are derived from the manual wet transfer method [5,6].…”
Section: Introductionmentioning
confidence: 99%