2006 IEEE International Symposium on Circuits and Systems
DOI: 10.1109/iscas.2006.1692663
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Automatic synthesis of CMOS RF front-ends

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Cited by 9 publications
(10 citation statements)
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“…On the other hand, equation-based methods [5][6][7] are faster, but are dependent on the accuracy of the models used. To overcome the disadvantages in some extent, advanced methods using both of equation-based and simulationbased approaches [8][9][10] have been also suggested.…”
Section: Introductionmentioning
confidence: 99%
“…On the other hand, equation-based methods [5][6][7] are faster, but are dependent on the accuracy of the models used. To overcome the disadvantages in some extent, advanced methods using both of equation-based and simulationbased approaches [8][9][10] have been also suggested.…”
Section: Introductionmentioning
confidence: 99%
“…2: for any specified target circuit performance, the P-Cell first chooses the optimal LNA topology and then calculates the optimal values for each circuit component. In other words, the P-Cell determines the circuit parameters such as transistor size, bias condition and passive value automatically for any given circuit performance specifications, which is a reverse-direction approach compared with the commonly-used approach in the synthesis [1][2][3] (calculating the circuit performance metrics from chosen circuit parameters).…”
Section: P-cell Building Approachmentioning
confidence: 99%
“…Available LNA design automation is mainly based on circuit synthesis [1][2][3]. Starting at some initial circuit component values such as transistor size, bias condition and passive values, the circuit performance metrics are calculated and then a cost function is evaluated.…”
Section: Introductionmentioning
confidence: 99%
“…However, this further complicates the expression for determination of L s , and hence the model in Fig. 2 a has been followed by many authors [1,2,3,4,5,7]. Further, in all the models of Fig.…”
Section: Introductionmentioning
confidence: 99%
“…1, a simple small signal transistor model shown in Fig. 2 a has been made use of [1,2,3]. This model includes the gate to source capacitor and a dependent current source controlled by the voltage between gate to source terminals, but other capacitance and transconductance effects are not included.…”
Section: Introductionmentioning
confidence: 99%