The phase‐transfer ligand exchange of PbS quantum dots (QDs) has substantially simplified device fabrication giving hope for future industrial exploitation. However, this technique when applied to QDs of large size (> 4 nm) gives rise to inks with poor colloidal stability, thus hindering the development of QDs photodetectors in short‐wavelength infrared range (∼1000‐3000 nm). Here, we demonstrate that methylammonium lead iodide ligands can provide sufficient passivation of PbS QDs of size up to 6.7 nm, enabling inks with a minimum of ten‐week shelf‐life time, as proven by optical absorption and solution‐small angle X‐ray scattering. Furthermore, the maximum linear electron mobility of 4.5 × 10−2 cm2 V−1 s−1 was measured in field‐effect transistors fabricated with fresh inks, while transistors fabricated with the same solution after ten‐week storage retained 74% of the average starting electron mobility, demonstrating the outstanding quality both of the fresh and aged inks. Finally, photodetectors fabricated via blade‐coating exhibited 76% external quantum efficiency at 1300 nm and 1.8 × 1012 Jones specific detectivity, values comparable with devices fabricated using ink with lower stability and wasteful methods such as spin‐coating.This article is protected by copyright. All rights reserved