Applied Physics Letters
 1997
DOI: 10.1063/1.120148
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Avalanche breakdown mechanism originating from Γ–X–Γ transfer in GaAs/AlAs superlattices

M. Hosoda1,
Koji Tominaga2,
Naoki Ohtani
3
et al.

Abstract: Articles you may be interested inFull-band Monte Carlo simulation of high-energy carrier transport in single photon avalanche diodes with multiplication layers made of InP, InAlAs, and GaAs

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Cited by 8 publications
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References 9 publications
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Intersubband electroluminescence using X-Γ carrier injection in a GaAs/AlAs double-quantum-well superlattice

Domoto1,
Ohtani2,
Kuroyanagi3
et al. 2001
Springer Proceedings in Physics
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Intersubband electroluminescence using X-Γ carrier injection in a GaAs/AlAs double-quantum-well superlattice

Domoto1,
Ohtani2,
Kuroyanagi3
et al. 2001
Springer Proceedings in Physics
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0
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Population inversion between subbands in simple periodical GaAs/AlAs superlattices

Domoto1,
Vaccaro2,
Ohtani3
2000
IEE Proceedings - Optoelectronics
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Carrier transport in GaAs/AlAs type-II superlattices under electric field: Switch from X–X to Γ–Γ transfer

Hosoda
1
,
Ohtani
2
,
Kuroyanagi
3
et al. 2000
Applied Physics Letters
2
0
3
0
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