2021
DOI: 10.1109/ted.2020.3039213
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Avalanche Delay and Dynamic Triggering in GaAs-Based S-Diodes Doped With Deep Level Impurity

Abstract: The article is concerned with a detailed switching delay effect exhibited by avalanche S-diodes-superfast GaAs closing switches doped with deep Fe centers. The current and voltage time dependences are simulated in a simplified generator. The dynamic electric field and charge profiles in the structures are calculated. This article describes an impact that Fe capture cross sections of free charge carriers have on delayed switching. The simulation results show that delayed switching is associated with deep center… Show more

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Cited by 16 publications
(15 citation statements)
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“…The structure of avalanche S-diodes under study is described in detail in [5]. The diodes were fabricated from GaAs structures obtained by vapor-phase epitaxy and doped with a deep Fe acceptor (ionization energy ΔE Fe = 0.5 eV).…”
Section: Experimental and Calculation Detailsmentioning
confidence: 99%
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“…The structure of avalanche S-diodes under study is described in detail in [5]. The diodes were fabricated from GaAs structures obtained by vapor-phase epitaxy and doped with a deep Fe acceptor (ionization energy ΔE Fe = 0.5 eV).…”
Section: Experimental and Calculation Detailsmentioning
confidence: 99%
“…To analyze this effect, the Technology Computer-Aided Design (TCAD) Synopsys (Sentaurus) software was used for calculations. A 1D avalanche S-diode model was developed earlier through hydrodynamic approximation [5]. It relies on the switching of the semiconductor structure through the filament channel [4], the generation of CFDs [8], and the recharging of deep Fe traps [5].…”
Section: Experimental and Calculation Detailsmentioning
confidence: 99%
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“…Возникновение ионизирующих доменов такого типа было впервые предсказано в GaAs-лавинных транзисторах [7] и возможно при сверхвысокой плотности тока (J ∼ 1 MA/cm 2 ), которая достигается вследствие локализации тока в узких каналах [7]. Механизм проводящего состояния в GaAs S-диодах, на протяжении многих лет объясняемый перезарядкой глубоких центров [1,2], в последние годы был пересмотрен и также связан с коллапсирующими доменами [8][9][10].…”
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