Avalanche Hot Source Method for Separated Extraction of Parasitic Source and Drain Resistances in Single Metal-Oxide-Semiconductor Field Effect Transistors

Abstract

Abstract-Separate extraction of source (R S ) and drain (R D ) resistances caused by process, layout variations and long term degradation is very important in modeling and characterization of MOSFETs. In this work, we propose "Avalanche Hot-Source Method (AHSM)" for simple separated extraction of R S and R D in a single device. In AHSM, the high field region near the drain works as a new source for abundant carriers governing the current-voltage relationship in the MOSFET at high drain bias. We applied AHSM to n-channel MOSFETs as single-finger type with different channel width/length (W/L) combinations and verified its usefulness in the extraction of R S and R D . We also confirmed that there is a negligible drift in the threshold voltage (V T ) and the subthreshold slope (SSW) even after application of the method to devices under practical conditions.