Avalanche noise in MQW DDR IMPATTs

1.0–10.0 THz Radiation from Graphene Nanoribbon Based Avalanche Transit Time Sources

“…The upper cut‐off frequency of GNR based IMPATT sources has been estimated from the calculated values of avalanche response time and transit time of the diodes designed to operate at different frequencies within the frequency range of 0.1–10 THz. Finally the static, high frequency properties and noise performance of proposed GNR IMPATT (G‐IMPATT) structures designed to operate at different mm‐wave and THz frequencies have been studied by using an in‐house simulation tool based on self‐consistent quantum drift‐diffusion model developed by the author . The terahertz performance of G‐IMPATTs has been compared with that of THz IMPATT sources based on other semiconductor materials as well as other solid‐state THz radiators as mentioned earlier, at the end of this paper and it is observed that the proposed G‐IMPATT sources possess huge potentiality to excel the terahertz performance of all other said sources especially within the frequency band of 1–10 THz.…”

“…The static (DC), high frequency and noise simulations of DDR G‐IMPATT diodes have been carried out by using in‐house simulation codes based on SCQDD model . The flowchart shown in Figure briefly describes the complete simulation procedure.…”

Three‐Terminal Graphene Nanoribbon Tunable Avalanche Transit Time Sources for Terahertz Power Generation

“…In this work, the 2D static (DC), high frequency, and noise simulation of the device structure shown in Figure a–c have been conducted using in‐house simulation codes based on the SCQDD model, which has been extended from 1D to 2D . The step by step procedure of the said simulation technique has already been illustrated by using a flowchart in the earlier report of the author .…”

“…Static, high frequency, and noise performance of 94, 140, 220 GHz and 0.3, 0.5, 1.0, 2.0, 5.0, 10.0 THz PCPC G‐IMPATT sources have been studied under different gate voltages to study the power and frequency tuning characteristics of those sources. In‐house simulation codes based on self‐consistent quantum drift–diffusion (SCQDD) model have been used for the simulation of the proposed structures . Important quantum mechanical (QM) phenomena, such as quantum confinement and quantum tunneling.…”

“…Important quantum mechanical (QM) phenomena, such as quantum confinement and quantum tunneling. which are bound to be present in the GNR structures under consideration are taken into consideration in the SCQDD simulation . The incorporation of such QM effects in the simulation is utmost necessity because those effects will be significantly pronounced in the GNR structures having sub‐10 nm width; here, the width of the G‐IMPATT diodes reduces under sub‐10 nm when the frequency of operation increases beyond 0.5 THz .…”