Avalanche photodiodes on silicon photonics

Yuan, Yuan; Tossoun, Bassem; Huang, Zhihong; Zeng, Xiaoge; Kurczveil, Géza; Fiorentino, Marco; Liang, Di; Beausoleil, Raymond G.

doi:10.1088/1674-4926/43/2/021301

Cited by 16 publications

(11 citation statements)

References 73 publications

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“…At V r = V br , GBP = 173 ± 30 and 99 ± 15 GHz, respectively, or 50-and 100-μm long devices. The values are reasonable compared to 33,46 , indicating good APD performance. The M, 3-dB OE bandwidth and GBP results for the 100-μm long devices can be found in the Supplementary Information (Fig.…”

Section: Definition Of Apd Parametersmentioning

confidence: 64%

Monolithically integrated, broadband, high-efficiency silicon nitride-on-silicon waveguide photodetectors in a visible-light integrated photonics platform

Lin

Yong

Luo³

et al. 2022

Nat Commun

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Visible and near-infrared spectrum photonic integrated circuits are quickly becoming a key technology to address the scaling challenges in quantum information and biosensing. Thus far, integrated photonic platforms in this spectral range have lacked integrated photodetectors. Here, we report silicon nitride-on-silicon waveguide photodetectors that are monolithically integrated in a visible light photonic platform on silicon. Owing to a leaky-wave silicon nitride-on-silicon design, the devices achieved a high external quantum efficiency of >60% across a record wavelength span from λ ~ 400 nm to ~640 nm, an opto-electronic bandwidth up to 9 GHz, and an avalanche gain-bandwidth product up to 173 ± 30 GHz. As an example, a photodetector was integrated with a wavelength-tunable microring in a single chip for on-chip power monitoring.

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Section: Definition Of Apd Parametersmentioning

confidence: 64%

Monolithically integrated, broadband, high-efficiency silicon nitride-on-silicon waveguide photodetectors in a visible-light integrated photonics platform

Lin

Yong

Luo³

et al. 2022

Nat Commun

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“…However, no matter what the method, under a certain constant current, measure the voltage between some contact points, find the respective resistance, and then according to different physical models, from the total resistance deduct various parasitic resistances, and finally achieve the specific contact resistance. For family InP compound semiconductors, P-type ohmic contact is generally much more difficult to make than n-type, firstly because the effective mass of the hole is larger than the electron, and secondly because it is determined by the device processing process itself [ 199 , 200 , 201 ]. We also summarize the evidence and the pros and cons for Ge (GeSn) and InGaAs APDs in Table 3 .…”

Section: Swir Apds Focal Plane Arrays (Fpas)mentioning

confidence: 99%

Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region

Miao¹,

Lin²,

Li³

et al. 2023

Nanomaterials

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Among photodetectors, avalanche photodiodes (APDs) have an important place due to their excellent sensitivity to light. APDs transform photons into electrons and then multiply the electrons, leading to an amplified photocurrent. APDs are promising for faint light detection owing to this outstanding advantage, which will boost LiDAR applications. Although Si APDs have already been commercialized, their spectral region is very limited in many applications. Therefore, it is urgently demanded that the spectral region APDs be extended to the short-wavelength infrared (SWIR) region, which means better atmospheric transmission, a lower solar radiation background, a higher laser eye safety threshold, etc. Up until now, both Ge (GeSn) and InGaAs were employed as the SWIR absorbers. The aim of this review article is to provide a full understanding of Ge(GeSn) and InGaAs for PDs, with a focus on APD operation in the SWIR spectral region, which can be integrated onto the Si platform and is potentially compatible with CMOS technology.

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“…Similar microring resonators, 10 in each bus waveguide, act as DEMUX to drop each channel's optical data into a corresponding highly sensitive photodetector (PD) to complete the receiver function. Two types of avalanche photodetectors (APDs) on Si [38], vizt., SiGe APDs and InAs/GaAs QD APDs, are being developed to detect weak optical signals for lowering source output power and subsequently total power consumption as much as possible. A target sensitivity of -20 dBm at 25 Gb/s for BER of 10 -12 is set to achieve the sub-pJ/bit energy efficiency of this 1 Tb/s DWDM TRx.…”

Section: Dwdm Transceiver Architecturementioning

confidence: 99%

An Energy-Efficient and Bandwidth-Scalable DWDM Heterogeneous Silicon Photonics Integration Platform

Liang

Srinivasan

Kurczveil

et al. 2022

IEEE J. Select. Topics Quantum Electron.

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Avalanche photodiodes on silicon photonics

Cited by 16 publications

References 73 publications

Monolithically integrated, broadband, high-efficiency silicon nitride-on-silicon waveguide photodetectors in a visible-light integrated photonics platform

Monolithically integrated, broadband, high-efficiency silicon nitride-on-silicon waveguide photodetectors in a visible-light integrated photonics platform

Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region

An Energy-Efficient and Bandwidth-Scalable DWDM Heterogeneous Silicon Photonics Integration Platform

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