Axial orientation of molecular-beam-epitaxy-grown Fe3Si∕Ge hybrid structures and its degradation

Abstract

The axial orientation of molecular-beam-epitaxy (MBE)-grown Fe3Si(111)∕Ge(111) hybrid structures was investigated by Rutherford backscattering spectroscopy. We confirmed that during MBE above 300°C, the interdiffusion of Fe and Ge atoms results in a composition change and the epitaxial growth of FeGe in Fe3Si. Low-temperature (<200°C) MBE can realize fully ordered DO3–Fe3Si with highly axial orientation [minimum yield (χmin)=2.2%]. Postannealing above 400°C results in a composition change and the degradation of axial orientation in the off-stoichiometric Fe3Si. The significance of stoichiometry with regard to thermal stability and the interfacial quality of Fe3Si(111)∕Ge(111) hybrid structures was also discussed.

Ion beam analysis of Heusler alloy Fe3Si epitaxially grown on Si(111)

“…The axial channeling along <111> directions was detected on Si(111) substrates. The parameters χ min , Ψ 1/2 were obtained from the angular yield profile χ(θ) (1) where θ 0 is an offset angle from the Si<111> axis and m is an index of randomness (usually m=2 or 4). Moreover, the total atomic displacement <u> was computed by …”

“…In the case of Fe 3 Si(111)/Ge(111) heterointerface with a very small lattice mismatch, thermally activated interdiffusion between Fe and Ge atoms caused significant disordering of atomic raw along Ge<111> axial directions [1]. On the other hand, the Fe 3 Si(111)/Si(111) hetero-interface has a large lattice mismatch by ~4%.…”

Epitaxial growth of a full-Heusler alloy Co2FeSi on silicon by low-temperature molecular beam epitaxy

“…[3,4,8] Here, we co-evaporated Co, Fe, and Si with growth rates of 1.32, 0.72, and 1.20 nm/min, respectively, using Knudsen cells.…”

Magnetoresistance effects in current‐perpendicular‐to‐plane structures based on Fe3Si/FeSi2 artificial lattices

“…Thus far, Fe/Si [16][17][18], Fe/Fe-Si [19,20], and Fe/Fe 1-x Si x [21] artificial lattices have been studied. Actually, researches of spintronics that employ Fe 3 Si for spin injection source have been actively made [22][23][24][25][26][27][28].…”