Axiotaxy of Bismuth Telluride Films on InP(111)B by High-Temperature Hot Wall Epitaxy

Abstract

We report a case of axiotaxy that takes place in growing films of the thermoelectric and topological-insulator material Bi2Te3 on InP(111)B by hot wall epitaxy. The films become poly-crystalline with a Te deficiency when the substrate temperature is barely below the limit for film deposition. In addition to the usual epitaxial component, for which the (0001) plane of Bi2Te3 is parallel to the (111) plane of InP, fiber textures led by the Bi2Te3(112̅0) plane emerge. The fiber axes are aligned to the ⟨111̅⟩- and ⟨772̅⟩-type directions of InP. Although the d-spacing is matched at the heterointerface, it is accomplished by means of coincidence site lattices for the ⟨111̅⟩ alignment.