AZO thin film-based UV sensors: effects of RF power on the films

Akin, Nihan; Baskose, U. Ceren; Kınacı, Barış; Çakmak, M.; Özçelik, Süleyman

doi:10.1007/s00339-015-9051-1

Cited by 25 publications

(9 citation statements)

References 22 publications

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“…For reference, the diffractogram of bulk ZnO is also shown. The peaks at 25.88º and 48º are related to the PET substrate, as indicated in earlier work 4,12,24 . The peaks near 34º and 62º refer to the (002) and (103) of the AZO film, respectively.…”

Section: Resultssupporting

confidence: 60%

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Comparison of RF and Pulsed Magnetron Sputtering for the Deposition of AZO Thin Films on PET

et al. 2020

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AZO thin films (around 200 nm thick) were grown on polyethylene terephthalate (PET) at room temperature. The plasma was activated using a 13.56 MHz (RF) or a 15 kHz pulsed (PMS) source at a power of 60 W. Optical reflection and transmittance were measured using a UV-Vis-NIR spectrometer over the wavelengths from 190 nm to 2500 nm. All samples show average transmittances greater than 83% in the visible region. The electrical resistivity was measured by the linear four-point probe method to be around 0.001 Ωcm for 200 nm-thick AZO films grown by PMS. XRD results indicated that the films had a hexagonal wurtzite structure and were preferentially oriented in the (002) plane. The surface morphology of the AZO thin films was characterized using Scanning Electron Microscopy (SEM); film chemical composition was studied using Energy Dispersive X-ray Spectroscopy (EDS). For this, an EDS coupled to the Scanning Electron Microscope was used. Only for films grown by PMS were no cracks observed.

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Section: Resultssupporting

confidence: 60%

“…Films of Transparent Conducting Oxide (TCO) have been used, amongst others, as transparent electrodes, in photovoltaic cells, light-emitting films, and intelligent windows [1][2][3][4] . Nowadays, the most used TCO is Indium Tin Oxide (ITO).…”

Section: Introductionmentioning

confidence: 99%

Comparison of RF and Pulsed Magnetron Sputtering for the Deposition of AZO Thin Films on PET

et al. 2020

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“…For instance, in our previous work [20], Al-doped zinc oxide (AZO) thin films with highest band gap of 3.43 eV and lowest resistivity of 1.84 × 10 − 4 Ω cm which is suitable for UV sensors as an active layer, has been achieved at 50 W RF power. For GZO thin films, high RF power may be more effective on the quality of the films.…”

Section: Introductionmentioning

confidence: 99%

Influence of RF power on the opto-electrical and structural properties of gallium-doped zinc oxide thin films

Akin

Kınacı

Özen

et al. 2017

J Mater Sci: Mater Electron

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“…Aluminum-doped zinc oxide (AZO) thin films, an n-type semiconductor with a hexagonal wurtzite crystal structure, have attracted noteworthy interest from the researcher because of their distinctive optical and electrical properties with a wide range of applications and good stability. It is a non-toxic, lower-cost, and sustainable alternative to using as transparent conductive oxide (TCO) or an electron-transport layer (ETL) in applications for optoelectronic devices [1], and a coating layer for UV sensors [2], gas sensors [3], and heaters [4]. Various methods such as RF-sputtering [1][2][3][4], sol-gel dip coating [5,6], pulse laser deposition [7,8], and atomic layer deposition [9] have been used to prepare the AZO thin film on both a glass and flexible substrates.…”

Section: Introductionmentioning

confidence: 99%

Phase and surface structures-optical transmittance correlation of sputtered Al-doped ZnO film on glass substrate

Niyom,

Rattanasakulthong

2023

Mater. Res. Express

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The electrical and optical properties of sputtered Al-doped ZnO films prepared on a glass substrate with different thicknesses (97, 127, 161, 211, and 276 nm) were systematically investigated. The 97 nm film showed only the main peak of the AZO (002) phase, whereas the rest films exhibited AZO (002) and (004) phases, and the peak intensities were obviously increased with increasing thickness. The films displayed a granular grain surface and columnar-like structure with different sizes and distributions depending on film thickness.Surface roughness was increased, whereas the electrical resistance was decreased with increasing film thickness. The smallest crystallite size of about 26 nm with the highest resistivity and lowest carrier concentration was observed on a 127 nm film, whereas the crystallite size of about 29 nm was observed on the 97, 161, 211, and 276 nm films. AllAZO films exhibited good electrical properties and transparency with an averaged optical transmittance higher than 80% in the visible wavelength. The 162 nm film showed the highest transmittance of 86% in the wavelength range of 350-900 nm and a wide energy band gap of3.52 eV because of the highest mobility and crystallite size with a columnar structure and random size distribution. The figure of merit (FOM) was strongly related to the optical band gap and tended to increase with increasing thickness. The results are attributed that the optical energy band gap was altered by film thickness by improving phase structure and surface morphology.

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AZO thin film-based UV sensors: effects of RF power on the films

Cited by 25 publications

References 22 publications

Comparison of RF and Pulsed Magnetron Sputtering for the Deposition of AZO Thin Films on PET

Comparison of RF and Pulsed Magnetron Sputtering for the Deposition of AZO Thin Films on PET

Influence of RF power on the opto-electrical and structural properties of gallium-doped zinc oxide thin films

Phase and surface structures-optical transmittance correlation of sputtered Al-doped ZnO film on glass substrate

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