Aдмиттанс МДП-структур на основе nBn-систем из эпитаксиального HgCdTe, разработанных для детектирования в спектральном диапазоне 3-5 μm

Abstract

The admittance of test MIS devices based on nBn structures from Hg1-xCdxTe grown by molecular beam epitaxy (MBE) is investigated. The composition x in the absorbing layer was 0.29, and the composition in the barrier layer was 0.60. An equivalent circuit of a MIS device based on an nBn structure is proposed and the values of the elements of this circuit are found under various conditions. Comparison of the temperature dependence of the barrier resistance with the Rule07 model indicates the possibility of creating efficient nBn detectors based on MBE HgCdTe for the spectral range of 3–5 μm.