2022
DOI: 10.1039/d2qi00613h
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Ba6In2Ge2Te15: a THz birefringent material with an intriguing quasi-[Te5]4− chain possessing large optical anisotropy and an ultrawide transmission range

Abstract: Exploring mid- and far-infrared (MFIR) and even terahertz (THz) birefringent crystal with a large optical anisotropy remains a great challenge. Herein, a novel THz birefringent material Ba6In2Ge2Te15, which contains the...

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Cited by 4 publications
(6 citation statements)
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“…19 More importantly, metal tellurides tend to form one-dimensional chain-like structures, which are beneficial for generating large optical anisotropy. 4,17 On the other hand, tellurides possess longer IR transparency cut-off edges because of the heavy atomic mass of tellurium. 24 Previously, we have successfully synthesized several new IR birefringent crystals, namely β-BaGa 2 Te 4 and Ba 6 In 2 Ge 2 Te 15 .…”
Section: Introductionmentioning
confidence: 99%
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“…19 More importantly, metal tellurides tend to form one-dimensional chain-like structures, which are beneficial for generating large optical anisotropy. 4,17 On the other hand, tellurides possess longer IR transparency cut-off edges because of the heavy atomic mass of tellurium. 24 Previously, we have successfully synthesized several new IR birefringent crystals, namely β-BaGa 2 Te 4 and Ba 6 In 2 Ge 2 Te 15 .…”
Section: Introductionmentioning
confidence: 99%
“…24 Previously, we have successfully synthesized several new IR birefringent crystals, namely β-BaGa 2 Te 4 and Ba 6 In 2 Ge 2 Te 15 . 4,19 The former features GaTe 2 chains consisting of [GaTe 4 ] tetrahedra by edge-sharing, showing a large birefringence of 0.325@2090 nm, and the latter has an intriguing quasi-Te 5 chain and Ge 2 In 2 Te 10 chain formed by the [InGe 2 Te 8 ] clusters and [InTe 4 ] tetrahedra by vertexsharing, exhibiting a large optical anisotropy of 0.42@2090 nm (0.337@30-40 μm) in both the MFIR and terahertz (THz) bands. However, both crystals exhibit noncongruent-melting behavior, which is unfavorable for the growth of large-sized single crystals.…”
Section: Introductionmentioning
confidence: 99%
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“…For decades, plentiful chalcogenides with a DL structure have been reported, mainly including the I–III–Q 2 (I = Li, Ag; III = Al, Ga, In; Q = S, Se, Te) family, ,, I 2 –IV–Q 3 (I = Ag, Cu; IV = Si, Ge, Sn; Q = S, Se) family, I 3 –V–Q 4 (I = Li, Ag, Cu; V = P, As, Sb; Q = S, Se) family, I 2 –II–IV–Q 4 (I = Li, Ag, Cu; II = Zn, Cd, Hg; IV = Si, Ge, Sn; Q = S, Se) family, and I 4 –II–IV 2 –Q 7 (I = Li, Ag; II = Zn, Cd, Hg, Mn; IV = Si, Ge, Sn; Q = S, Se) family. , However, most of the compounds mentioned above are sulfides and selenides, and tellurides with DL structures are rarely reported. Compared with sulfides and selenides, tellurides generally possess a larger electronic polarization and a wider transmittance range, making them potentially more suitable candidates as MFIR NLO materials …”
Section: Introductionmentioning
confidence: 99%
“…Compared with sulfides and selenides, tellurides generally possess a larger electronic polarization and a wider transmittance range, making them potentially more suitable candidates as MFIR NLO materials. 61 Based on the above discussion, classical AgGaTe 2 was selected as the structural prototype for the exploration of telluride NLO materials with DL structures. Regretfully, although AgGaTe 2 possesses a large SHG coefficient (d eff = 77 pm/V) and a wide transmission range (∼23 μm), the light sensitivity of Ag causes a narrow band gap, resulting in a low laser damage threshold, which seriously hinders their further applications.…”
Section: ■ Introductionmentioning
confidence: 99%