Back-to-back Interface diodes induced symmetrical negative differential resistance and reversible bipolar resistive switching in β-CuSCN trigonal pyramid micro/nanoarray

Controllably modulated asymmetrical photoresponse with a nonvolatile memory effect in a single CH3NH3PbI3 micro/nanowire for photorectifiers and photomemory

“…Thus, it is relatively easy for the quantum tunneling effect to occur, and the device can show a variation from weak to strong photoresponse. 24,33,40,[56][57][58] The corresponding diagrammatic sketch is illustrated in Fig. 9c.…”

Contrasting analog and digital resistive switching memory characteristics in solution-processed copper(i) thiocyanate and its polymer electrolyte-based memristive devices

“…More recently, W. Chen et al reported negative differential resistance and bipolar resistive switching memory in symmetric ITO/CuSCN/ITO devices where the CuSCN layer was electrodeposited. 28 Here, in this study, we fabricated two types of memristive devices with the switching medium as (i) CuSCN and (ii) CuSCN-based solid polymer electrolyte (Cu-SPE). Both the switching materials are solution-processed and spin-coated.…”