Back-to-back Schottky diodes: the generalization of the diode theory in analysis and extraction of electrical parameters of nanodevices

Chiquito, A. J.; Amorim, Cleber A.; Berengue, Olívia M.; Araujo, Luana S.; Bernardo, Eric P; Leite, E. R.

doi:10.1088/0953-8984/24/22/225303

Cited by 132 publications

(102 citation statements)

References 33 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…4,24 We further note that the post DEP thermal anneal step helps to eliminate the presence of mid-gap states at the Au-CuO interface, which can otherwise lead to Fermi level pinning. 25 Second, we obtain a poor fit of our data with the operational form 26 of the back-toback Schottky diode (see characteristic fitting in supplementary material 27 S1 for IV obtained at 260 K). Finally, as we show next, a low voltage, linear IV is observed in all our data which is not characteristic of back-to-back Schottky conduction mechanism, either.…”

mentioning

confidence: 91%

Charge transport in single CuO nanowires

Yin

et al. 2014

Applied Physics Letters

View full text Add to dashboard Cite

Charge transport in single crystal, p-type cupric oxide (CuO) nanowire (NW) was studied through temperature based (120 K–400 K) current-voltage measurements. CuO NW with a diameter of 85 nm was attached to Au electrodes 2.25 μm apart, using dielectrophoresis. At low electrical field (<0.89 × 103 V/cm), an ohmic conduction is observed with an activation energy of 272 meV. The injected electrons fill traps with an average energy, ET = 26.6 meV and trap density, NT = 3.4 × 1015 cm−3. After the traps are saturated, space charge limited current mechanism becomes dominant. For 120 K ≤ T ≤ 210 K phonon scattering limits mobility. For T ≥ 220 K, a thermally activated mobility is observed and is attributed to small polaron hopping with an activation energy of 44 meV. This mechanism yields a hole mobility of 0.0015 cm2/V s and an effective hole concentration of 4 × 1018 cm−3 at 250 K.

show abstract

mentioning

confidence: 91%

Charge transport in single CuO nanowires

Yin

et al. 2014

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…This type of 2-terminal devices can be thought of as MSM devices202122. We have used such a device model to analyze the opto-electronic data on SNW photodetectors made from Cu:TCNQ NWs1423.…”

Section: Resultsmentioning

confidence: 99%

Sustained Resistive Switching in a Single Cu:7,7,8,8-tetracyanoquinodimethane Nanowire: A Promising Material for Resistive Random Access Memory

Basori

Kumar

Raychaudhuri

2016

Sci Rep

View full text Add to dashboard Cite

We report a new type of sustained and reversible unipolar resistive switching in a nanowire device made from a single strand of Cu:7,7,8,8-tetracyanoquinodimethane (Cu:TCNQ) nanowire (diameter <100 nm) that shows high ON/OFF ratio (~103), low threshold voltage of switching (~3.5 V) and large cycling endurance (>103). This indicates a promising material for high density resistive random access memory (ReRAM) device integration. Switching is observed in Cu:TCNQ single nanowire devices with two different electrode configuration: symmetric (C-Pt/Cu:TCNQ/C-Pt) and asymmetric (Cu/Cu:TCNQ/C-Pt), where contacts connecting the nanowire play an important role. This report also developed a method of separating out the electrode and material contributions in switching using metal-semiconductor-metal (MSM) device model along with a direct 4-probe resistivity measurement of the nanowire in the OFF as well as ON state. The device model was followed by a phenomenological model of current transport through the nanowire device which shows that lowering of potential barrier at the contacts likely occur due to formation of Cu filaments in the interface between nanowire and contact electrodes. We obtain quantitative agreement of numerically analyzed results with the experimental switching data.

show abstract

“…An alternative model worth considering when dealing with contacts between metals and gapped material is that of Chiquito et al, which describes back-to-back Schottky diodes and has been reported to explain the I (V ) behavior of one-dimensional semiconducting SnO 2 nanobelts contacted by various metals [39]. In this case, the nonlinear effects observed are primarily due to the work function of the metal used to contact the semiconductor, which is a situation well described as a Schottky interface, at the two ends of a narrow strip of an otherwise ballistic conductor.…”

Section: Discussionmentioning

confidence: 99%

Nanostructure investigations of nonlinear differential conductance inNdNiO3thin films

Hardy¹,

Ji²,

Mikheev³

et al. 2014

Phys. Rev. B

View full text Add to dashboard Cite

Transport measurements on thin films of NdNiO 3 reveal a crossover to a regime of pronounced nonlinear conduction below the well-known metal-insulator transition temperature. The evolution of the transport properties at temperatures well below this transition appears consistent with a gradual formation of a gap in the holelike Fermi surface of this strongly correlated system. As T is decreased below the nominal transition temperature, transport becomes increasingly non-Ohmic, with a model of Landau-Zener breakdown becoming most suited for describing I (V ) characteristics as the temperature approaches 2 K.

show abstract

Back-to-back Schottky diodes: the generalization of the diode theory in analysis and extraction of electrical parameters of nanodevices

Cited by 132 publications

References 33 publications

Charge transport in single CuO nanowires

Charge transport in single CuO nanowires

Sustained Resistive Switching in a Single Cu:7,7,8,8-tetracyanoquinodimethane Nanowire: A Promising Material for Resistive Random Access Memory

Nanostructure investigations of nonlinear differential conductance inNdNiO3thin films

Contact Info

Product

Resources

About