We report on the analysis of nonlinear current-voltage characteristics exhibited by a set of blocking metal/SnO(2)/metal. Schottky barrier heights in both interfaces were independently extracted and their dependence on the metal work function was analyzed. The disorder-induced interface states effectively pinned the Fermi level at the SnO(2) surface, leading to the observed Schottky barriers. The model is useful for any two-terminal device which cannot be described by a conventional diode configuration.

In this work we report on structural and Raman spectroscopy measurements of pure and Sn-doped In 2 O 3 nanowires. Both samples were found to be cubic and high quality single crystals. Raman analysis was performed to obtain the phonon modes of the nanowires and to confirm the compositional and structural information given by structural characterization. Cubic-like phonon modes were detected in both samples and their distinct phase was evidenced by the presence of tin doping. As a consequence, disorder effects were detected evidenced by the break of the Raman selection rules.

The study of structures based on nonstoichiometric SnO 2−x compounds, besides experimentally observed, is a challenging task taking into account their instabilities. In this paper, we report on single crystal Sn 3 O 4 nanobelts, which were successfully grown by a carbothermal evaporation process of SnO 2 powder in association with the well known vapor-solid mechanism. By combining the structural data and transport properties, the samples were investigated. The results showed a triclinic semiconductor structure with a fundamental gap of 2.9 eV. The semiconductor behavior was confirmed by the electron transport data, which pointed to the variable range hopping process as the main conduction mechanism, thus giving consistent support to the mechanisms underlying the observed semiconducting character.

Over the last two decades, oxide nanostructures have been continuously evaluated and used in many technological applications. The advancement of the controlled synthesis approach to design desired morphology is a fundamental key to the discipline of material science and nanotechnology. These nanostructures can be prepared via different physical and chemical methods; however, a green and ecofriendly synthesis approach is a promising way to produce these nanostructures with desired properties with less risk of hazardous chemicals. In this regard, ZnO and TiO2 nanostructures are prominent candidates for various applications. Moreover, they are more efficient, non-toxic, and cost-effective. This review mainly focuses on the recent state-of-the-art advancements in the green synthesis approach for ZnO and TiO2 nanostructures and their applications. The first section summarizes the green synthesis approach to synthesize ZnO and TiO2 nanostructures via different routes such as solvothermal, hydrothermal, co-precipitation, and sol-gel using biological systems that are based on the principles of green chemistry. The second section demonstrates the application of ZnO and TiO2 nanostructures. The review also discusses the problems and future perspectives of green synthesis methods and the related issues posed and overlooked by the scientific community on the green approach to nanostructure oxides.

Using low-resistance indium contacts, we measured some transport properties of undoped vapor-liquid-solid grown tin oxide monocrystals with a belt shape. From the transport measurements, the two following conduction mechanisms were investigated: thermal activation and variable range hopping. An energy gap of 3.8 eV was found. The energy gap was confirmed by thermally activated measurements in the range between 10 and 300 K. For high temperatures (T>300 K), the influence of the disorder caused by the superficial ions layer is measurable. The electron transport in this case was found to be governed by the well known variable range hopping mechanism and the spatial extension of carrier’s wavelength was calculated to be 4 nm.